Related papers: SiNx RRAMs performance with different stoichiometr…
We demonstrate experimentally two-fold enhancement of the decay rate of NV$^0$ centers on diamond/Si substrate as opposed to a bare Si substrate. We link the decay enhancement to the interplay between the excitation of substrate modes and…
Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance,…
We developed a cryogenic photon readout system to monitor arrays of DUNE SiPMs operating at various over-voltages in liquid nitrogen (LN2) for over three months. Photoelectron signals were read out simultaneously via weak capacitive…
Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical,…
Slow time-dependent fluctuations, or noise, in the electrical resistance of dc magnetron sputtered thin films of Nickel Titanium shape memory alloys have been measured. Even in equilibrium, the noise was several orders of magnitude larger…
We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high…
Field-tuned superconductor-insulator transition (FSIT) behavior in 2D isotropic and homogeneous thin films is usually accompanied by a nonvanishing critical resistance at low $T$. It is shown that, in a 2D film including line defects…
We report on a combined measurement of high-resolution x-ray diffraction on powder and Raman scattering on single crystalline NiS2-xSex samples that exhibit the insulator-metal transition with Se doping. Via x-rays, an abrupt change in the…
Typically the superconducting phase weakens at several points with the increase in disorder before it is distroyed in the 2d-thin films. This may lead to an inhomogeneous superconducting state without a continuous phase. Here we present…
Transition Metal Nitrides are a versatile class of materials, combining chemical robustness, high hardness, and superconducting behaviour with critical temperatures between 2 to 10 K. While several binary TMNs have been explored,…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Spin relaxometry using solid-state spin defects, such as the diamond nitrogen-vacancy (NV) center, probes dynamical processes by measuring how environmental fluctuations enhance the spin relaxation rate. In the weak-coupling limit,…
Strained coherent heteroepitaxy of III-V semiconductor films such as In$_x$Ga$_{1-x}$As/GaAs has potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other…
The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
Vortex dynamics is strongly connected with the mechanisms responsible for the photon detection of superconducting devices. Indeed, the local suppression of superconductivity by photon absorption may trigger vortex nucleation and motion…
We propose a theoretical study for Si thin film thickness measurement that is based on incident low energy electron beam on the film and counting the transmitted/incident electron fraction. It estimates the thin film thickness distribution…
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible…
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…
Ductile Regime Machining of semiconductors (DRM) offers higher quality of the resulting surfaces. To optimize this process, it is required to understand the thermal kinetics of silicon metallization under pressure. Such understanding is not…