Related papers: Low Resistance Non-Alloyed Ohmic Contacts to High …
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on…
Beta gallium oxide ($\beta$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present…
In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using a new low temperature (LT) pulsed metal-organic chemical…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in…
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV)…
Half-Heusler(HH) alloys have shown promising thermoelectric properties in the medium and high temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low…
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (UWBG) Al0.70Ga0.30N channel metal semiconductor field-effect…
Ultra-wide-band-gap group-III nitrides are of interest for applications in deep-ultraviolet optoelectronics and power electronics. Such devices must be able to efficiently dissipate heat generated from their operation, making the thermal…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack…
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni…
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. In this study, the co-optimization of p-InGaN and n- AlGaN…
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young's Modulus. The fabrication of stable, low resistance, ohmic…
Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for…
We report on fabrication and performance of submicron Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low…
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies…
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical…