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Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity…
We experimentally and numerically study dispersive wave emission, soliton fission and supercontinuum generation in a silicon wire at telecommunication wavelengths. Through dispersion engineering, we experimentally confirm a previously…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
We propose and demonstrate a dispersion control technique by combination of different waveguide cross sections in an aluminum nitride micro-ring resonator. Narrow and wide waveguides with normal and anomalous dispersion, respectively, are…
We demonstrate coherent supercontinuum generation (SCG) in a monolithically integrated lithium-niobate waveguide, under the presence of second- and third-order nonlinear effects. We achieve more than two octaves of optical bandwidth in a…
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300{\deg}C). Their structural, chemical and optical…
This paper presents a three layer index guided lead silicate (SF57) photonic crystal fiber which simultaneously promises to yield large effective optical nonlinear coefficient and low anomalous dispersion that makes it suitable for…
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented,…
Thin-film lithium niobate (TFLN) is an emerging platform for compact, low-power nonlinear-optical devices, and has been used extensively for near-infrared frequency conversion. Recent work has extended these devices to mid-infrared…
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel properties can enable innovative material configurations with…
The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly…
Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…
Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…
High-quality ultra-thin films of niobium nitride (NbN) are developed by plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors (SNSPDs) patterned from this material exhibit high switching…
Aluminum nitride (AlN) is an extremely promising material for integrated photonics because of the combination of strong \c{hi}2 and \c{hi}3 nonlinearities. However, the intrinsic hardness of the material and charging effects during electron…
A systematic dispersion engineering approach is presented toward designing a III-Nitride micro-resonator for a blue/UV frequency comb. The motivation for this endeavor is to fill the need for compact, coherent, multi-wavelength photon…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
We report on the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the UV wavelength range. During the epitaxial growth of AlInN layer, an AlInN shell is…
We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes by using nickelocene as a precursor, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. The…