Related papers: Physics-based Full-band GaN High-Electron-Mobility…
Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30-60%, despite their ultrafast decay. However, their impact on…
Hybrid organic-inorganic perovskites (HOIPs) have become an important class of semiconductors for solar cells and other optoelectronic applications. Electron-phonon coupling plays a critical role in all optoelectronic devices, and although…
We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of…
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…
Hot electrons are theoretically predicted to be long-lived in strongly confined quantum dots, which could play vital roles in quantum dot-based optoelectronics; however, existing photoexcitation transient spectroscopy investigations reveal…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
The anharmonic properties of the low-frequency E2 phonon in ZnO were measured using impulsive stimulated Raman scattering. At 5 K, the frequency and lifetime are (2.9787 +/- 0.0002) THz and (211 +/- 7) ps. The unusually long lifetime and…
Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers…
We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 GHz and 640 GHz respectively, in a 14 nm GaAs / 2 nm AlAs superlattice structure. By comparing measurements at 296 K and 79 K we separate the…
This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
We measure the lifetime of the zone-center 340 GHz longitudinal phonon mode in a GaAs-AlAs superlattice excited and probed with femtosecond laser pulses. By comparing measurements conducted at room temperature and liquid nitrogen…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultra-thin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time…
The hot phonon bottleneck effect is a promising mechanism for the realization of a true hot carrier solar cell. Prior work has assumed that the acoustic phonons created via decay of polar longitudinal optical (LO) phonons are assumed to…
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG =…
Advancement in quantum information and quantum technologies has ushered in a new era of technological revolution in large scale atomistic simulation and efficient system on a chip device fabrication. This has led to innovative ways of…
This work, presents a study of lifetime of carriers due to intrinsic scattering mechanisms $viz.$ electron-electron (EEI), electron-phonon (EPI) and phonon-phonon interactions (PPI) in a promising half-Heusler thermoelectric FeVSb. Using…