Related papers: Sub Band Gap Operation Limits for Perovskite Light…
Several methods have been proposed in the literature to improve Free Electron Laser output by transforming the electron phase-space before entering the FEL interaction region. By utilising `beam by design' with novel undulators and other…
The extragalactic background light (EBL) in the IR to UV bands partly absorbs very high energy (VHE, $E \geq$ 100GeV) $\gamma-$ray photons travelling over cosmological distances via pair production. In this paper, to get stronger…
Despite significant advances in lead-free perovskite photovoltaics, achieving a balance among environmental safety and high optoelectronic performance remains challenging. The inorganic double perovskite Cs2AgBiBr6 has emerged as a…
The operation of Ultrafast Electron Diffractometers (UEDs) and Free-Electron Lasers (FELs) relies on high-brightness electron beams produced by radio-frequency (RF) photocathode guns. The next generation of high-repetition rate UEDs and…
Various topological laser concepts have recently enabled the demonstration of robust light-emitting devices that are immune to structural deformations and tolerant to fabrication imperfections. Current realizations of photonic cavities with…
In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully…
Field Emitting Arrays (FEAs) are a promising alternative to the conventional cathodes in different vacuum electronic devices such as traveling wave tubes, electron accelerators and etc. Electrical gating and modulation capabilities,…
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this…
Antiperovskite derivatives have recently emerged as promising lead-free alternatives to halide perovskites for optoelectronic applications. Here, using a comprehensive first-principles calculations including density functional perturbation…
In pursuit of an all-inorganic non-toxic perovskite solar cell (PSC) with enhanced performance, we have investigated the rhombohedral phase of the germanium-based rubidium halide perovskites RbGeX$_3$ (X = Cl, Br, I). The structural…
We present a detailed study of the electroluminescence of intersubband devices operating in the light-matter strong coupling regime. The devices have been characterized by performing angle resolved spectroscopy that shows two distinct light…
We demonstrate the splitting of a low-energy electron beam by means of a microwave pseudopotential formed above a planar chip substrate. Beam splitting arises from smoothly transforming the transverse guiding potential for an electron beam…
The power conversion efficiency of the market-dominating silicon photovoltaics approaches its theoretical limit. Bifacial solar operation with harvesting additional light impinging on the module back and the perovskite/silicon tandem device…
Next generation hard X-ray free electron lasers require electron beams with low transverse emittance. One proposal to achieve these low emittances is to exploit the eigen-emittance values of the beam. The eigen-emittances are invariant…
Due to their well-suited optoelectronic properties, metal halide perovskites are emerging semiconductor materials with potential applications in solar cells, detectors, and light-emitting diodes. Beyond the traditional 3D perovskites,…
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic…
Unbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead…
Perovskite nanoplatelets possess extremely narrow absorption and emission linewidths, which are crucial characteristics for many optical applications. However, their underlying intrinsic and extrinsic line-broadening mechanisms are poorly…
The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…