Related papers: Boosting the Memory Window of Memristive Stacks vi…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
In complex materials observed electronic phases and transitions between them often involves coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are…
Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant…
Twisted oxide membranes represent a promising platform for exploring moire physics and emergent quantum phenomena. However, the presence of amorphous interfacial dead layers in conventional oxide heterostructures impedes coherent coupling…
We report the observation of a magnetic field assisted transient superconducting state in the two dimensional electron gas existing at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. This metastable state depends critically on the…
We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 {\deg}C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is…
Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phases demands the fabrication of pristine interfaces and the…
The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer the interface physics through the growth of atomically…
Stacked intelligent metasurfaces (SIMs) represent a key enabler for next-generation wireless networks, offering beamforming gains while significantly reducing radio-frequency chain requirements. In conventional space-only SIM architectures,…
Combining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin-based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin-spray process, which is a unique non-vacuum,…
Neuromorphic architectures offer great promise for achieving computation capacities beyond conventional Von Neumann machines. The essential elements for achieving this vision are highly scalable synaptic mimics that do not undermine…
Recent experiments have found new magnetic behaviors, which are different from the parent bulk materials, at the interfaces between 3$d$ and 5$d$ oxides such as SrMnO$_3$ (SMO) and SrIrO$_3$ (SIO). The system is of considerable interest due…
Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
The novel electronic properties emerging at interfaces between transition metal oxides, and in particular the discovery of conductivity in heterostructures composed of LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) band insulators, have generated new…
Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g.…
In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic…