Related papers: Enhancing solar cell efficiency of AlxIn1-xN/Si he…
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of…
Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance to high…
Here, we report the first experimental demonstration of InN nanowire solar cells deposited by RF sputtering with a bandgap energy of 1.78 eV. By adding an amorphous Si (a-Si) buffer to the n-InN/p-Si structure, we have improved the…
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…
The p-type amorphous/ n-type crystalline silicon (P+ a-Si/N+ c-Si) heterojunction was simulated for developing the solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of…
Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of…
Sulfide chalcopyrite, Cu(In,Ga)S2, having wide bandgap (larger than 1.5 eV), favorable optoelectronic properties, and high stability, is a promising top-cell absorber for tandem applications. Adapting device structures optimized for 1.0 -…
In this paper we carried out theoretical study of the general issues related to the efficiency of SiC:H/a-Si:H single- and multi-junction tandem solar cells. Implementation of numerical simulations by the use of AMPS-1D program of…
Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the effect of the Al mole fraction x from 0 to 0.56 on the…
We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…
In this work is comprising of simulation results of amorphous Si (a-Si) solar cell, in which ITO was used as an anti-reflection coating (ARC). The thickness of ITO was optimized (65 nm) to achieve better performance for spectral region of…
Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures…
Density functional theory and many-body (GW+BSE) calculations of transmittance, absorbance, and reflectance are performed on silicon and black phosphorus (BP). We find that a damping value of 0.01 used in the dielectric function calculation…
We present a model for simulating performance of 3D nano -coaxial and -hemispherical thin film solar cells. The material system considered in these simulations is hydrogenated amorphous silicon (a-Si:H), with solar cells fabricated in an…
In this paper, we present a theoretical study on the absorption efficiency enhancement of a thin film amorphous Silicon (a-Si) photovoltaic cell over a broad spectrum of wavelengths using multiple nanoparticle arrays. The light absorption…
This study investigates the critical role of buffer layers in enhancing the efficiency of thin-film CdTe solar cells. We explore non-toxic buffer materials, specifically ZnSe, ZnMgO, 3C-SiC, and WS2, as potential replacements for the…
In this study, we designed and optimized the performance of pin junction GaAs/AlGaAs heterojunction nanowire solar cell arrays. It is done by performing coupled optoelectronic simulations to find the optimal doping for the GaAs core and…
The P+ {\alpha}-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of…
Solution-processed amorphous silicon is a promising material for semiconductor devices. Unfortunately, its manufacturing leaves a high density of defects in the layer, which can be reduced by a treatment with hydrogen radicals. Here, we…
This paper proposes an efficient three-layered p-GaAs/p-CIGS/n-CdS (PPN), a unique solar cell architecture. Copper indium gallium selenide (CIGS)-based solar cells exhibit substantial performance than the ones utilizing cadmium sulfide…