Related papers: Altermagnetoelectric Spin Field Effect Transistor
We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the…
Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic…
Spin textures such as magnetic domain walls and skyrmions have the potential to revolutionize electronic devices by encoding information bits. Although recent advancements in ferromagnetic films have led to promising device prototypes,…
Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…
Altermagnetism -a magnetic state characterized by spin-polarized electronic bands at zero net magnetization- offers a promising route for next-generation spintronic devices. In two-dimensional (2D) magnets, twist engineering enables its…
Antiferromagnetic (AFM) spintronics offers a pathway toward electrically controllable spin-based devices beyond ferromagnets. Here, we identify wurtzite MnX (X = S, Se, Te) as a family of multiferroic materials hosting competing AFM phases,…
Altermagnetism is a new magnetic phase with k-dependent spin polarization and may exist in an insulating state with a high N\'eel temperature. This provides a new opportunity to obtain both spin and electric polarization in one material.…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
Here, we explore the role of inherent altermagnetic topology in transverse transport phenomena (such as crystal/anomalous Hall, Nernst, and thermal Hall effects) in several famous altermagnets, including tetragonal…
Altermagnets are an emerging class of collinear antiferromagnets that exhibit unconventional spin-polarised electronic bands, potentially unlocking new functionalities that do not rely on spin-orbit coupling (SOC). Experimental signatures…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
Altermagnetism has emerged as a third type of collinear magnetism. In contrast to standard ferromagnets and antiferromagnets, altermagnets exhibit extra even-parity wave spin order parameters resulting in a spin-splitting of electronic…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
Altermagnets, a recently identified class of magnetic materials, possess a spin-split Fermi surface that results in the so-called spin splitter effect, enabling the generation of a spin current transverse to the injection direction and…
Conducting altermagnets have recently emerged as intriguing materials supporting strongly spin-polarized currents without magnetic stray fields. We demonstrate that altermagnets enable three key functionalities, merging superconductivity…
Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…
Altermagnetism is a recently identified class of magnetic order characterized by unconventional momentum-dependent spin splitting in the absence of net magnetization, and understanding its electronic and magnetic properties is essential for…
Recent studies reveal that $\mathcal{T}$-odd spin currents generated via the nonrelativistic altermagnetic spin splitting effect (ASSE) exhibit significant potential for spintronics applications, with both computational and experimental…