Related papers: A Low-Cost Reliable Racetrack Cache Based on Data …

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

The byte-addressable Non-Volatile Memory (NVM) is a promising technology since it simultaneously provides DRAM-like performance, disk-like capacity, and persistency. The current NVM deployment is symmetric, where NVM devices are directly…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…

Spin-Transfer Torque Magnetic RAM} (STT-MRAM) is a promising alternative for SRAMs in on-chip cache memories. Besides all its advantages, high error rate in STT-MRAM is a major limiting factor for on-chip cache memories. In this paper, we…

Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

The rapid growth of deep neural network (DNN) workloads has significantly increased the demand for large-capacity on-chip SRAM in machine learning (ML) applications, with SRAM arrays now occupying a substantial fraction of the total die…

Computing-in-memory with emerging non-volatile memory (nvCiM) is shown to be a promising candidate for accelerating deep neural networks (DNNs) with high energy efficiency. However, most non-volatile memory (NVM) devices suffer from…

Solid-State Drives (SSDs) have significant performance advantages over traditional Hard Disk Drives (HDDs) such as lower latency and higher throughput. Significantly higher price per capacity and limited lifetime, however, prevents…

Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…

Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the…

Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but…

The advent of non-volatile memory (NVM) technologies like PCM, STT, memristors and Fe-RAM is believed to enhance the system performance by getting rid of the traditional memory hierarchy by reducing the gap between memory and storage. This…

Arising disruptive memory technologies continuously make their way into the memory hierarchy at various levels. Racetrack memory is one promising candidate for future memory due to the overall low energy consumption, access latency and high…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

Emerging non-volatile memory (NVM) technologies promise memory speed byte-addressable persistent storage with a load/store interface. However, programming applications to directly manipulate NVM data is complex and error-prone. Applications…