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We report on the synthesis and extensive characterization of layered Bi4O4S3 superconductor. This is the optimally doped sample with Tc ~5.3 K out of a series of Bi6O4S4(SO4)_1-x samples synthesized by solid state reaction. The series was…

Superconductivity · Physics 2013-04-17 P. Srivatsava , Shruti , S. Patnaik

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect…

Materials Science · Physics 2015-06-11 F. -T. Huang , M. -W. Chu , H. H. Kung , W. L. Lee , R. Sankar , S. -C. Liou , K. K. Wu , Y. K. Kuo , F. C. Chou

Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called…

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is…

Mesoscale and Nanoscale Physics · Physics 2018-07-24 Evgeniy Ponomarev , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Helmuth Berger , Alberto F. Morpurgo

Lateral heterostructures of 2D transition metal dichalcogenide offer a powerful platform to investigate photonic and electronic phenomena at atomically sharp interfaces. However, their controlled engineering, including tuning lateral domain…

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…

Silicon telluride (Si2Te3) is a silicon-based 2D chalcogenide with potential applications in optoelectronics. It has a unique crystal structure where Si atoms form Si-Si dimers to occupy the "metal" sites. In this paper, we report an ab…

Materials Science · Physics 2019-06-27 Romakanta Bhattarai , Xiao Shen

Silicon (Si) is one of the most extensively studied materials owing to its significance to semiconductor science and technology. While efforts to find a new three-dimensional (3D) Si crystal with unusual properties have made some progress,…

Materials Science · Physics 2018-02-23 Kisung Chae , Duck Young Kim , Young-Woo Son

The electronic dispersion for Bi2Sr2CaCu2O(8+d) has been determined from angle-resolved photoelectron spectroscopy (ARPES). From this dispersion we calculate the entropy and superfluid density. Even with no adjustable parameters we obtain…

Superconductivity · Physics 2009-11-13 J. G. Storey , J. L. Tallon , G. V. M. Williams

Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct…

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

The phenomenon of negative-U behavior, where a defect traps a second charge carrier more strongly than the first, has been established in many host crystals. Here we report the case of four-carrier transitions for both vacancy defects in…

Materials Science · Physics 2024-04-17 Xinwei Wang , Sean R. Kavanagh , David O. Scanlon , Aron Walsh

Density functional theory and molecular dynamics simulations have been used to optimize the structure of nanowires of SiO2. The starting structures were based on b-cristobalite, orthotridymite, b-tridymite, and rutile crystals. The analysis…

Materials Science · Physics 2012-08-02 José I. Martínez , Federico Calle-Vallejo , Clifford M. Krowne , Julio A. Alonso

Two-dimensional (2D) heterostructures reveal novel physicochemical phenomena at different length scales, that are highly desirable for technological applications. We present a comprehensive density functional theory study of van der Waals…

Materials Science · Physics 2024-10-21 Kati Asikainen , Matti Alatalo , Marko Huttula , S. Assa Aravindh

Vanadium is a transition metal with multiple oxidation states and V2O5 is the most stable form among them. Besides catalysis, chemical sensing and photo-chromatic applications, V2O5 is also reported to exhibit a semiconductor to metal…

Materials Science · Physics 2018-01-03 Raktima Basu , Sandip Dhara

The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via…

Materials Science · Physics 2007-05-23 Alexander Mattausch , Michel Bockstedte , Oleg Pankratov

The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room…

The finding of superconductivity in Ba0.6K0.4Fe2As2 put the attention on the investigation of compounds that crystallize with ThCr2Si2 structure type such as AT2X2 (A = alkali/ alkaline earth/ rare earth element; T = transition metal and X…

Superconductivity · Physics 2012-12-10 Andrea V. Hoffmann , Viktor Hlukhyy , Thomas F. Fässler

We report a first-principles study of Bi-based 3$d$-5$d$ ordered double perovskite oxides (A$_2$BB$^\prime$O$_6$) with a 3$d$ atom (Fe) at the B-site and 5$d$ atoms (Re,Ir) at the B$^\prime$-site while keeping highly polarizable ions…

Materials Science · Physics 2019-12-25 Paresh C. Rout , Varadharajan Srinivasan

The layered oxychalcogenide semiconductor Bi$_2$O$_2$Se (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattice constants, the perovskite oxide SrTiO$_3$ (STO) has been…

Materials Science · Physics 2024-12-17 Ziye Zhu , Jingshan Qi , Xiaorui Zheng , Xiao Lin , Wenbin Li