Related papers: Wafer-Scale Single-Crystalline Monolayer Graphene
Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor…
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy…
The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard…
The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here.…
We report on the results of the first-principle numerical study of spontaneous breaking of chiral (sublattice) symmetry in suspended monolayer graphene due to electrostatic interaction, which takes into account the screening of Coulomb…
The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using four-probe measurements. We show that the continuous change in…
The realization of the unusual properties of 2-d materials requires the formation of large domains of single layer thickness, extending over the mesoscale. It is found that the formation of ideal graphene on SiC, contrary to textbook…
Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the…
Graphene is the first example of truly two-dimensional crystals - it's just one layer of carbon atoms. It turns out to be a gapless semiconductor with unique electronic properties resulting from the fact that charge carriers in graphene…
Multilayer graphene (MLG) films were grown by chemical vapour deposition (CVD) on molybdenum carbide ($MoC_{x}$) substrates. We fabricated the catalytic $MoC_{x}$ films by plasma enhanced atomic layer deposition (PEALD). The mechanism of…
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance…
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the…
Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G…
We have investigated electron band structure of epitaxially grown graphene on an SiC(0001) substrate using angle-resolved photoemission spectroscopy. In single-layer graphene, abnormal high spectral intensity is observed at the Dirac energy…
The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical,…
In great contrast to the numerous discoveries of superconductivity in layer-stacked graphene systems, the absence of superconductivity in the simplest and cleanest monolayer graphene remains a big puzzle. Here, through realistic computation…
We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute…
Practical applications of graphene require a reliable high-throughput method of graphene identification and quality control, which can be used for large-scale substrates and wafers. We have proposed and experimentally tested a fast and…
We propose a novel method for controlling the high-harmonic generation (HHG) with a high dynamic range in single-layer graphene. We find that, by utilizing shear strain, a significant enhancement or quenching of HHG is possible over a range…
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000{\deg}C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite…