Related papers: Non-magnetic spin splitting driven by spin-valley-…
We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which…
We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…
We investigated the effect due to perpendicular magnetic field on quantum wires where spin-orbit interaction (SOI) of electrons is not neglected. Based on the calculated energy dispersion, the nonlinear ballistic conductance ($G$) and…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular…
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…
We develop a theory of non-linear growth direction transport in magnetically doped II-VI compound semiconductor multiple-quantum-well systems. We find that the formation of electric field domains can be controlled by manipulating the space…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
We present a first principles investigation of the electronic properties of monolayer WS$_2$ coated with an overlayer of Fe. Our ab initio calculations reveal that the system is a half-metallic ferromagnet with a gap of $\sim 1$ eV for the…
We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$,…
Electric fields are increasingly used for coherently manipulating spin states in semiconductor and molecular systems. Here we discuss the spin manipulation allowed by the modulation of the main parameters entering the Hamiltonians of…
Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…
The new two-dimensional materials, MoSi$_2$N$_4$ and WSi$_2$N$_4$ are experimentally synthesized successfully and various similar structures are predicted theoretically. Here, we report the electronic properties with a special focus on the…
We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling…
Two-dimensional excitons formed in quantum materials such as monolayer transition-metal dichalcogenides and their strong light-matter interaction have attracted unrivalled attention by the research community due to their extraordinarily…
Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
In many paradigmatic materials, like Transition Metal Dichalcogenides, the role played by the spin degrees of freedom is as important as the one played by the electron-electron interaction. Thus an accurate treatment of the two effects and…
The metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing upon cooling from a charge density wave state. The interplay…