Related papers: Reststrahlen band and optical bandgaps in semicond…
An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic…
The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted molecular beam epitaxy are investigated. The layers grown on…
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for…
We report the uniaxial anisotropic optical constants of Wurtzite type AlN films deposited on Si (100) substrate using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 C). Evolution of optical properties…
AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition…
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591…
ScN is an emerging transition metal nitride with unique physical properties arising from the d-electrons of Sc. In this work we present the results of optical characterization techniques spectroscopic ellipsometry, Raman spectroscopy, and…
We investigate the electrical properties of nominally undoped, 10-40-nm-thick ScN(111) layers grown on nearly lattice-matched GaN:Fe/Al$_2$O$_3$(0001) templates by plasma-assisted molecular beam epitaxy. Hall-effect measurements yield…
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300{\deg}C). Their structural, chemical and optical…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported,…
Angular-dependent channeling Rutherford Backscattering Spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-xCrxN films grown by reactive molecular-beam…
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel properties can enable innovative material configurations with…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by…
Spectroscopic ellipsometry is a powerful method with high surface sensitivity that can be used to monitor the growth of even sub-monolayer film. However, the analysis of ultrathin films is complicated by the correlation of the dielectric…
An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…
CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF…
Wide bandgap semiconductors with high room temperature mobilities are promising materials for high-power electronics. Stannate films provide wide bandgaps and optical transparency, although electron-phonon scattering can limit mobilities.…