Related papers: Defect-Aware Physics-Based Compact Model for Ferro…
Direct automatic segmentation of objects from 3D medical imaging, such as magnetic resonance (MR) imaging, is challenging as it often involves accurately identifying a number of individual objects with complex geometries within a large…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
Transformer decoding is constrained by both attention compute and KV-cache movement. This paper presents the Ferroelectric Charge-Domain Compute Cell (FCDC), a hafnium-zirconium-oxide (HZO) memcapacitor with an access device that stores…
Visual Place Recognition (VPR) is a critical task for performing global re-localization in visual perception systems. It requires the ability to accurately recognize a previously visited location under variations such as illumination,…
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated…
This paper presents a machine learning-based approach to correct inference errors caused by stuck-at faults in fully analog ReRAM-based neuromorphic circuits. Using a Design-Technology Co-Optimization (DTCO) simulation framework, we model…
The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of…
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
We introduce a combined density functional theory (DFT) and non-equilibrium Green's function (NEGF) framework to compute the capacitance of nanocapacitors and directly extract the dielectric response of a sub-nanometer dielectric under…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry…
Fluid molecular ferroelectrics are a new class of organic materials where ferroelectricity is found in conjunction with 3D fluidity whilst still retaining spontaneous polarization values comparable to their traditional solid state…
Optical devices with metastable states controlled with light (optical flip-flops) are needed in data storage, signal processing and displays. Although non-volatile optical memory relying on structural phase transitions in chalcogenide…
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier…
In this letter, we quantify the impact of device limitations on the classification accuracy of an artificial neural network, where the synaptic weights are implemented in a Ferroelectric FET (FeFET) based in-memory processing architecture.…
The discovery of two-dimensional (2D) materials possessing switchable spontaneous polarization with atomic thickness opens up exciting opportunities to realize ultrathin, high-density electronic devices with potential applications ranging…
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc.…
Disentangling attributes of various sensory signals is central to human-like perception and reasoning and a critical task for higher-order cognitive and neuro-symbolic AI systems. An elegant approach to represent this intricate…
Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied…