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Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

The magnetization reversal process in thin-film ferromagnetic elements with surface anisotropy of various shapes and sizes is investigated by means of numerical simulation. The dependence of the perpendicular and in-plane hysteresis loops…

Mesoscale and Nanoscale Physics · Physics 2018-03-14 N. A. Usov , O. N. Serebryakova

We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…

Beautiful theories of magnetic hysteresis based on random microscopic disorder have been developed over the past ten years. Our goal was to directly compare these theories with precise experiments. We first developed and then applied…

Ferroelectrics and antiferroelectrics are the electric counterparts of ferromagnets and antiferromagnets. These materials undergo temperature- and electric-field-induced phase transitions that give rise to their characteristic hysteresis…

Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization,…

Strongly Correlated Electrons · Physics 2024-05-16 Asliddin Khudoyberdiev , Götz S. Uhrig

The magnetization dynamics of a synthetic antiferromagnet subject to a short magnetic field pulse, has been studied by using a combination of first-principles and atomistic spin dynamics simulations. We observe switching phenomena on the…

The influence of a transverse static magnetic field on the magnetic hyperthermia properties is studied on a system of large-losses ferromagnetic FeCo nanoparticles. The simultaneous measurement of the high-frequency hysteresis loops and of…

Materials Science · Physics 2015-06-03 B. Mehdaoui , J. Carrey , M. Stadler , A. Cornejo , C. Nayral , F. Delpech , B. Chaudret , M. Respaud

We report results demonstrating a singularity in the hysteresis of magnetic materials, the reversal-field memory effect. This effect creates a nonanalyticity in the magnetization curves at a particular point related to the history of the…

Disordered Systems and Neural Networks · Physics 2007-05-23 H. G. Katzgraber , F. Pazmandi , C. R. Pike , Kai Liu , R. T. Scalettar , K. L. Verosub , G. T. Zimanyi

The magnetic behaviors of a spin-1/2 alternating Heisenberg antiferromagnetic chain in a staggered transverse magnetic field is studied by means of the density-matrix renormalization group method and Jordan-Wigner transformation. Quantum…

Strongly Correlated Electrons · Physics 2009-04-07 Guang-Qiang Zhong , Shou-Shu Gong , Qing-Rong Zheng , Gang Su

We use sensitive dynamic cantilever magnetometry to measure the magnetic hysteresis of individual magnetic Janus particles. These particles consist of hemispherical caps of magnetic material deposited on micrometer-scale silica spheres. The…

Mesoscale and Nanoscale Physics · Physics 2021-12-07 S. Philipp , B. Gross , M. Reginka , M. Merkel , M. Claus , M. Sulliger , A. Ehresmann , M. Poggio

The ability to probe a materials electromechanical functionality on the nanoscale is critical to applications from energy storage and computing to biology and medicine. Voltage modulated atomic force microscopy (VM-AFM) has become a…

Mesoscale and Nanoscale Physics · Physics 2019-04-16 Liam Collins , Yongtao Liu , Olga Ovchinnikova , Roger Proksch

Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their…

Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane…

Mesoscale and Nanoscale Physics · Physics 2016-04-06 B. C. Koop , T. Descamps , V. Korenivski

We introduce antiferromagnetic quantum fluctuations into quantum annealing in addition to the conventional transverse-field term. We apply this method to the infinite-range ferromagnetic p-spin model, for which the conventional quantum…

Quantum Physics · Physics 2012-05-14 Yuya Seki , Hidetoshi Nishimori

Magnetic nanoparticles (MNPs) have been proposed as an ultimate solution for diverse applications including nanomedicine and logic devices over decades. However, none has emerged revolutionary because realizing their magnetization response…

Applied Physics · Physics 2020-02-19 Mohammad Reza Zamani Kouhpanji , Pieter B Visscher , Bethanie J H Stadler

We report on theoretical and experimental investigations of a novel hysteresis effect that has been observed on the magnetoresistance of quantum-Hall bilayer systems. Extending to these system a recent approach, based on the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Afif Siddiki , Stefan Kraus , Rolf R. Gerhardts

We investigate the magnetic hysteresis of a superconducting microstrip resonator with a high edge barrier. We measure the magnetic hysteresis while either sweeping a magnetic field or tuning the edge barrier by high microwave current. We…

Superconductivity · Physics 2018-12-11 Sangil Kwon , Yong-Chao Tang , Hamid R. Mohebbi , David G. Cory , Guo-Xing Miao

Information processing and storing by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units whose memory content can be easily tuned…

Quantum Physics · Physics 2022-03-02 Ariel Norambuena , Felipe Torres , Massimiliano Di Ventra , Raúl Coto

Single-molecule magnets (SMMs) exhibiting open hysteresis loops may potentially apply to molecule-based information processing and storage. However, the capacity to retain magnetic memory is always limited by zero-field quantum tunneling of…