Related papers: High Mobility Multiple-Channel AlScN/GaN Heterostr…
In order to use graphene for semiconductor applications, such as transistors with high on/off ratios, a band gap must be introduced into this otherwise semimetallic material. A promising method of achieving a band gap is by introducing…
Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…
Guided phonons have become an increasingly important platform for classical and quantum information processing. While conventional surface acoustic wave systems are typically only guided in the vertical direction, two-dimensionally confined…
This work reports on the measured performance of an Aluminum Scandium Nitride (AlScN) Two-Dimensional Resonant Rods resonator (2DRR), fabricated by using a Sc-doping concentration of 24%, characterized by a low off-resonance impedance (~25…
The nanometer-scale size-dependent electronic transport properties of crystalline (c-) and amorphous (a-) germanium telluride (GeTe) ultrathin films sandwiched by titanium nitride (TiN) electrodes are investigated using ab initio molecular…
We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…
Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical…
Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as GaN and (Al,Ga)N. However, the leakage current in epitaxial…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…
We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by…
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While…
In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…
We report on fabrication and performance of submicron Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low…
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with…
The electride Sr$_3$CrN$_3$ has a one-dimensional channel of electron density, which is a rare feature that offers great potential for fast ion conduction. Using density functional theory, we find that Sr$_3$CrN$_3$ is an excellent hydride…
We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off…
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are…