Related papers: High-Purity Diamond Integration on $\beta$-Ga$_2$O…
The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films,…
Single-crystalline diamond (SCD) films possess exceptional thermal, chemical, and optical properties, making them ideal for advanced applications. However, achieving uniform film quality via microwave plasma chemical vapor deposition…
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is…
The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal…
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude…
Polycrystalline diamond coatings have been grown on cemented carbide substrates with different aspect ratios by a microwave plasma CVD in methane-hydrogen gas mixtures. To protect the edges of the substrates from non-uniform heating due to…
$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…
Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron…
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant…
The ultrawide-bandgap semiconductor $\beta$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality…
Diamond offers unique material advantages for the realization of micro- and nanomechanical resonators due to its high Young's modulus, compatibility with harsh environments and superior thermal properties. At the same time, the wide…
Detailed structural and electrical properties of ultra-nano-crystalline diamond (UNCD) films grown in H$_\text{2}$/CH$_\text{4}$/N$_\text{2}$ plasma were systematically studied as a function of deposition temperature ($T_d$) and nitrogen…
The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional…
Discovered and reported exactly 40 years ago, microwave plasma assisted chemical vapor deposition (MPACVD) pointed out an economic technology that could potentially produce lab-grown diamond stones at scale. After this breakthrough…
In this work a strategy to grow diamond on $\beta$-Ga$_2$O$_3$ has been presented. The $\zeta$-potential of the $\beta$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The…
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature,…
Diamond cavity optomechanical devices hold great promise for quantum technology based on coherent coupling between photons, phonons and spins. These devices benefit from the exceptional physical properties of diamond, including its low…
We present an approach for the CVD growth of diamond, where the sample is placed in a defined distance from the reactor baseplate, to which the plasma couples. We observe two previously unknown growth regimes. In the first case, the sample…
A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM0(n>1)p clamshell style reactor (Seki…
The mechanism of ballas like nano crystalline diamond formation (NCD) still remains elusive, and this work attempts to analyze its formation in the framework of activation energy ($E_\text{a}$) of NCD films grown from…