Related papers: Midinfrared Semiconductor Photonics - A Roadmap
Mid-infrared spectroscopy, an important and widespread technique for sensing molecules, has encountered barriers stemming from sources either limited in tuning range or excessively bulky for practical field use. We present a compact,…
The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there…
The mid-infrared spectral window is essential for molecular fingerprinting and atmospheric sensing, yet unlocking its full potential is currently constrained by a fundamental instrumental trade-off: existing systems cannot simultaneously…
The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
Silicon photodetectors are highly desirable for their CMOS compatibility, low cost, and fast response speed. However, their application the infrared (IR) is limited by silicon's intrinsic bandgap, which restricts its detection to photons…
The mid-infrared spectral range holds great promise for applications such as molecular spectroscopy and telecommunications. Many key molecules exhibit strong absorption features in this range, and free-space optical communication benefits…
Upconversion imaging, where mid infrared (IR) photons are converted to visible and near IR photons via a nonlinear crystal and detected on cheap and high-performance Silicon detectors, is an appealing method to address the limitations of…
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is…
Infrared (IR) images are widely used in many fields such as medical imaging, object tracking, astronomy and military purposes for securing borders. Infrared images can be captured day or night based on the type of capturing device. The…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88…
Compared to imaging in the visible and near-infrared regions below 900 nm, imaging in the second near-infrared window (NIR-II, 1000-1700 nm) is a promising method for deep-tissue high-resolution optical imaging in vivo mainly due to the…
We present the design, fabrication, and optical characterization of ultra-compact mid-wave infrared photodetector pixels. Our design relies on a guided mode resonance structure to confine incident mid-infrared light to the 250 nm-thick…
The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve…
We developed a technique that enables to replace a metallic waveguide cladding with a low-index (n $\sim$ 1.4) material - CaF2 or BaF2 - that in addition is transparent from the mid-IR up to the visible range: elevated confinement is…
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…
Infrared (IR) imaging is one of the significant tools for the quality control measurements of fabricated samples. Standard IR imaging techniques use direct measurements, where light sources and detectors operate at IR range. Due to the…