Related papers: Switching perpendicular magnets for Processing-in-…
Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so…
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…
Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in…
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but…
Recent experiments have revealed spectacular transport properties of conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$) have started a new trend to realize a large magnetoresistance, which is the change of…
Spin-orbit torque (SOT) created by a spin current injected into a ferromagnet by an adjacent heavy metal represents an efficient tool for the excitation and manipulation of spin waves. Here we report the micromagnetic simulations describing…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…
Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…
We investigate interacting spin susceptibilities in lattice models for $\mathcal{T}$-reversal symmetry-broken Weyl semimetals. We employ a random phase approximation (RPA) method for the spin-SU(2)-symmetry-broken case that includes…
Motivated by recent progress in employing two key classes of two-dimensional materials-topological insulators and transition-metal dichalcogenides (TMDCs)-as spin sources for generating spin-orbit torque (SOT), we investigate…
We develop a semiclassical Boltzmann theory for frequency-dependent magneto-optical transport in Weyl semimetals (WSMs), incorporating momentum-dependent relaxation via a scattering matrix approach. The interplay of orbital magnetic moment,…
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The…
Motivated by recent experiments observing a large antidamping spin-orbit torque (SOT) on the surface of a three-dimensional topological insulator, we investigate the origin of the current-induced SOT beyond linear-response theory. We find…
Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets.…
Continuous switching driven by spin-orbit torque (SOT) is preferred to realize neuromorphic computing in a spintronic manner. Here we have applied focused ion beam (FIB) to selectively illuminate patterned regions in a Pt/Co/MgO strip with…
The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies…
We propose a novel spin-orbit torque (SOT) driven and voltage-gated domain wall motion (DWM)-based MTJ device and its application in neuromorphic computing. We show that by utilizing the voltage-controlled gating effect on the DWM, the…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pumping (SP) and…
In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons and binarized synapses for a single-cycle analog in-memory computing (IMC) architecture. First, an analog…