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There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
Physically Unclonable Functions (PUFs) have become an important and promising hardware primitive for device fingerprinting, device identification, or key storage. Intrinsic PUFs leverage components already found in existing devices, unlike…
In order to manipulate the properties of graphene, its very important to understand the electronic structure in presence of disorder. We investigate, within a tight-binding description, the effects of disorder in the on-site (diagonal…
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of…
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we…
In this work, we unveil the effect of RS, induced by a current-voltage hysteresis cycles across CVD-grown monolayer MoS2 based gated RRAM, on its transistors electrical and reliability characteristics. A unique gate voltage dependence on…
Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. Unique to two-dimensional (2D) van der Waals materials, the control can be achieved by modifying the stacking order through…
We examine the charge transport through disordered arrays of metallic dots using numerical simulations. We find power law scaling in the current-voltage curves for arrays containing no voids, while for void-filled arrays charge bottlenecks…
The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a…
The ability to trap a single cell or microparticle in three dimensions is important for biomedical and microfluidic applications. Single-beam acoustic tweezers based on focused waves provide a compact and biocompatible approach because of…
The effect of stress-triaxiality on growth of a void in a three dimensional single-crystal face-centered-cubic (FCC) lattice has been studied. Molecular dynamics (MD) simulations using an embedded-atom (EAM) potential for copper have been…
We numerically study the superfluid to Mott insulator transition for bosonic atoms in a one dimensional lattice by exploiting a recently developed simulation method for strongly correlated systems. We demonstrate this methods accuracy and…
In this paper we analyze the effect of dynamical three-dimensional MHD turbulence on test particle acceleration, and compare how this evolving system affects particle energization by current sheets interaction, against frozen-in-time…
Security and energy-efficiency are critical for computing applications in general and for edge applications in particular. Digital in-Memory Computing (IMC) in SRAM cells have widely been studied to accelerate inference tasks to maximize…
The development of quantum materials and the tailoring of their functional properties is of fundamental interest in materials science. Here, a new design concept is proposed for the robust quantum anomalous Hall effect via entropy…
Many experimental studies have reported variations in interfacial tension. Isolating all the geometric and fluid material parameters and varying the interfacial tension can be useful to check their influence. Numerical investigations using…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
A conformal transformation of a uniform triangular pinning array produces a structure called a conformal crystal which preserves the six-fold ordering of the original lattice but contains a gradient in the pinning density. Here we use…