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We have investigated the deterioration of field effect transistors based on twodimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were…
Here we report the results of an investigation into the effects of ionizing radiation on commercial-off-the-shelf InGaAs and Si photodiodes. The photodiodes were exposed to 30, 52, and 98 MeV protons with fluences ranging from 10^8 -…
Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species…
Electrical resistivity and magnetic susceptibility measurements under high pressure were performed on an iron-based superconductor LaFePO. A steep increase in superconducting transition temperature (Tc) of LaFePO with dTc/dP > 4 K/GPa to a…
We study the effects of pressure on the electron-phonon interaction in MgB_2 using density-functional-based methods. Our results show that the superconductivity in MgB_2 vanishes by 100 GPa, and then reappears at higher pressures. In…
High-pressure resistivity experiments were performed on the recently discovered superconductor, MgB2. Tc decreases quasi-linearly with applied pressure to 1.4 GPa at a rate of -2.0(1) K/GPa, which is somewhat larger than that derived from…
The recently synthesized ThFeAsN iron-pnictide superconductor exhibits a $T_c$ of 30 K, the highest of the 1111-type series in absence of chemical doping. To understand how pressure affects its electronic properties, we carried out…
We present an investigation of inkjet printed strain gauges based on two-dimensional (2D) materials. The technology leverages water-based and biocompatible inks to fabricate strain measurement devices on flexible substrates such as paper.…
High pressure electrical resistivity and x-ray diffraction experiments have been performed on Fe single crystals. The crystallographic investigation provides direct evidence that in the martensitic $bcc \rightarrow hcp$ transition at 14 GPa…
A High-Pressure Ion Trap operating at pressure ~1 Torr is a core component of the portable hand-held mass-spectrometric gas analyzer. A comprehensive mathematical model of the HPIT is described in this paper. The influence of the…
Using ab initio evolutionary simulations, we explore all the possible stoichiometries for Mg-O system at pressures up to 850 GPa. In addition to MgO, our calculations find that two extraordinary compounds MgO2 and Mg3O2 become…
We experimentally study the real-time susceptibility of trapped-ion quantum systems to small doses of ionizing radiation. We expose an ion-trap apparatus to a variety of $\alpha$, $\beta$, and $\gamma$ sources and measure the resulting…
AC susceptibility measurements have been carried out on superconducting LaO1-xFxFeAs for x=0.07 and 0.14 under He-gas pressures to about 0.8 GPa. Not only do the measured values of dTc/dP differ substantially from those obtained in previous…
The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy,…
High pressure effects on the superconducting transitions of beta-pyrochlore superconductors AOs2O6 (A = Cs, Rb, K) are studied by measuring resistivity under high pressures up to 10 GPa. The superconducting transition temperature Tc first…
The performance of a Si PIN diode (type Hamamatsu S3590-06) as an energy sen- sitive detector operating at cryogenic temperatures (~10 K) and in magnetic fields up to 11 T was investigated, using a 207Bi conversion electron source. It was…
The pressure effect on the superconducting transition temperature of MgB2 has been determined using gas pressure up to 1 GPa. The transition temperature Tc was found to decrease linearly at a constant rate over the whole pressure range. The…
Measurements of the superconducting transition temperature Tc have been performed by the inductive method on MgB2 at pressures up to 28 GPa. Tc decreases with applied pressure, exhibiting a cusp at about 9 GPa. We interpret the appearance…
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of…
Hydrogen-sulfide (H2S) was studied by x-ray synchrotron diffraction (XRD) and Raman spectroscopy up to 150 GPa at 180-295 K and by quantum-mechanical variable-composition evolutionary simulations. The experiments show that H2S becomes…