Related papers: Quench rate dependence of center formation in Er i…
Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower…
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is…
We have studied the 1.5 $\mu$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication…
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket…
Quantum memories could benefit many devices in quantum information processing. For a quantum to be useful in real-world applications, the quantum memory must have a high recall efficiency. Here we demonstrate an efficient (up to 80%)…
Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing. For…
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and…
Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…
We numerically simulate the time evolution of the Ising field theory after quenches starting from the $E_8$ integrable model using the Truncated Conformal Space Approach. The results are compared with two different analytic predictions…
We present molecular dynamics simulations of shallow Al implantation in 4H-SiC to clarify how implantation temperature and dose control defect evolution and dopant activation during early annealing. Using the Gao-Weber potential together…
Phase structure of rapidly quenched solid helium samples is studied by the NMR technique. The pulse NMR method is used for measurements of spin-lattice $T_1$ and spin-spin $T_2$ relaxation times and spin diffusion coefficient $D$ for all…
Self-ion implantation amorphization is an established approach to study the structure and properties of amorphous silicon (a-Si). Fluctuation Electron Microscopy (FEM) has consistently observed Medium-Range Order (MRO) in this system that…
Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to…
We investigated the thermal stability of scintillation and the luminescence performances of (La, Gd)${}_{2}$Si${}_{2}$O${}_{7}$ single crystals at various Ce concentrations. We prepared (La${}_{0.25-x}$, Ce${}_{x}$,…
Controlling planar fault shearing mechanisms is key for improving the high-temperature creep performance of gamma prime-strengthened high-temperature superalloys. This work examines how the Ti concentration in L12-strengthened CoNi-based…
Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. Here, we…
Electrons in condensed matter have internal degrees of freedom, such as charge, spin and orbital, leading to various forms of ordered states through phase transitions. However, in individual materials, a charge/spin/orbital ordered state of…
High-performance quantum memory for quantized states of light is a prerequisite building block of quantum information technology. Despite great progresses of optical quantum memories based on interactions of light and atoms, physical…