Related papers: Micro-crystal GaAs array sub-cells for Si tandem s…
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with…
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
We have realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112, (2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Q…
Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom…
We investigate the properties of electronic states and optical transitions in hexagonal GaAs quantum dots within AlGaAs nanowires. Such dots are particularly interesting due to their high degree of symmetry. A streamlined postsymmetrization…
Tandem solar cells are at the forefront of extending the efficiency limits of solar cell technology. Among two-terminal tandems, current-matched (CM) tandem solar cells are of particular interest, owing to their relative ease of…
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…
Multimode interference and multipolar interplay govern functionalities of optical nanoresonators and nonlinear nanoantennas. Recently, excitation of the high-quality supercavity modes (quasi-BIC states) in individual subwavelength…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
The single-band high-efficiency light absorption of nanostructures finds extensive applications in var ious fields such as photothermal conversion, optical sensing, and biomedicine. In this paper, a vertically stacked nanohybrid structure…
Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…
Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single…
In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in-situ by X-ray…
Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required…
In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility…