Related papers: Micro-crystal GaAs array sub-cells for Si tandem s…

The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n…

Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…

Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…

This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…

The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…

In this paper the state-of-the-art for exploiting the unique physical and chemical properties of crystalline materials and their possible applications for development of crystalline nanocomposites with the tailored anisotropy were…

Flat-optics platforms offer new opportunities for the generation of entangled photons by relaxing traditional phase-matching constraints, enabling the use of a broader range of nonlinear materials. Among these, gallium arsenide and aluminum…

This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high efficiency solar cells. Our findings demonstrate that the…

Sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a wide bandgap semiconductor suitable for the top cell of a tandem solar device. Here we demonstrate significant improvements in absorber quality by alloying with Ag to form (Ag,Cu)(In,Ga)S2…

This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which…

The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by…

The GaAs/AlGaAs materials system is well suited to multi-bandgap applications such as the multiple quantum well solar cell. GaAs quantum wells are inserted in the undoped AlGaAs active region of a pin structure to extend the absorption…

Nanostructures, especially of silicon, are of paramount importance for new generation solar cell applications. The key material requirements for solar cells are good electrical conductivity, confinement of excitons, and a tunable band-gap…

Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…

We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical anoantennas. Using a selective oxidation technique, we fabricate such epitaxial semiconductor nanoparticles on an aluminum oxide substrate. Second harmonic generation from…

Growth of catalyst-free AlxGa1-xN (0.15<x<0.50)/GaN nanowires by plasma assisted molecular beam epitaxy is thoroughly structural and chemical analyzed by using transmission electron microscopy related techniques. We found that well-defined…

We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN…

In this paper, we have investigated the optical properties of GaAs nanocone (NC), inverted nanocone (INC), and hourglass (HG) shaped solar cells by performing Finite Difference Time Domain (FDTD) simulations. The different structures are…

We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…