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Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high…
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
Achieving high quantum efficiency (QE) with low dark count is essential for highly sensitive photodetectors (PDs), including single photon avalanche detectors (SPADs). However, high QE requires a thicker absorber region, which leads to high…
The rapid development of coherent short-wavelength light sources in the extreme ultraviolet (EUV) and soft X-ray (SXR) regimes has created a growing need for advanced optoelectronic detection capabilities, particularly for…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
Here we propose a waveguide-integrated germanium plasmonic photodetector that is based on a long-range dielectric-loaded surface plasmon polariton waveguide configuration. As this configuration ensures a long propagation distance, i.e.,…
Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a…
Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband…
Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate…
Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in…
The simplicity in the fabrication of photoconductors makes them a valuable choice to investigate optoelectronic properties of colloidal quantum dot (cQD) films. Lateral photoconductors generally require a large size, in the mm2, and are…
The availability of high-frequency pulsed emitters in the $2-2.5\,\mu$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition,…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
Single Photon Detectors (SPD) are fundamental to quantum optics and quantum information. Superconducting Nanowire SPDs (SNSPD) [1] provide high performance in terms of quantum efficiency (QE), dark count rate (DCR) and timing jitter [2],…
Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…