Related papers: Magnetically controllable nonlinear valley Hall ef…
The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…
The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
Achieving external control over the anomalous valley Hall (AVH) effect is essential for advancing valleytronic applications. However, many of the existing approaches suffer from limitations such as irreversibility or volatility. In this…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Valleytronics harnesses the valley degree of freedom -- energy-degenerate extrema in the electronic band structure -- for information storage and processing. Valley Hall effect (VHE) is a cornerstone of valleytronics, enabling electric…
The search for two-dimensional materials with exotic valley-dependent properties has attracted rapid attention as they are fundamentally intriguing and practically appealing for nanoscale device applications. Here, using first-principles…
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model…
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal…
The nonlinear Hall effect (NLHE) has been detected in various of condensed matter systems. Unlike linear Hall effect, NLHE may exist in physical systems with broken inversion symmetry in the crystal. On the other hand, real space spin…
Valley-contrasting Hall transport conventionally relies on the inversion symmetry breaking in two-dimensional systems, which greatly limits the selection range of valley materials. In particular, while monolayer transition metal…
We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly-polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry-forbidden. This opens a…
2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…
Hall effect of topological quantum materials often reveals essential new physics and possesses potential for application. Magnetic Weyl semimetal is one especially interesting example that hosts an interplay between the spontaneous…
We propose that a large and tunable valley-selective Hall effect can be realized in a centrosymmetric system via light-induced breaking of inversion and time-reversal symmetries. This is demonstrated in graphene driven by bicircularly…