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The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the…
Indium-tin oxide (ITO) is a crucial functional layer for the optoelectronic applications, such as non-volatile color display thin films based on the ITO/phase-change material (PCM)/ITO/reflective metal multilayer structures on a silicon…
Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary…
We have measured the temperature dependence of the direct band gap, $E_g$, in SrTi$^{16}$O$_3$ and BaTiO$_3$ and related materials with quantum-paraelectric and ferroelectric properties using optical spectroscopy. We show that $E_g$…
Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium…
The electronic and magnetic properties in ABO3 perovskite oxides are extremely sensitive to lattice structure but also the dimensionality, such as the thickness in thin film form. Here, we report the thickness-dependent electro-magnetic…
Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the…
Barium titanate (BaTiO$_3$) is a prototypical ferroelectric perovskite that undergoes the rhombohedral-orthorhombic-tetragonal-cubic phase transitions as the temperature increases. In this work, we develop a classical interatomic potential…
The Si based TiO2 thin films were prepared via the combination both of Sol-Gel and Spin-Coating method. The films were sintered at 850 degrees Celsius for half an hour, and the resulting films were characterized by X-ray diffraction (XRD)…
The temperature dependence of the resistivity of epitaxial Ba(Fe_(1-x)Co_x)2As2 thin films (with nominal doping x = 0.08, 0.10 and 0.15) has been analyzed and compared with analogous measurements on single crystals taken from literature.…
TiO$_2$ and WO$_3$ are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO$_3$ and TiO$_2$ have been investigated leading to improvements of key performance…
SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low temperatures by quantum fluctuations. Within this unusual quantum paraelectric phase, superconductivity persists despite extremely dilute…
We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates.…
We present a combined study with conventional far-infrared and time-domain terahertz ellipsometry of the temperature dependent optical response of SrTiO3 thin films (85 and 8.5 nm) that are grown by pulsed-laser deposition on LSAT…
Epitaxially grown SrTiO$_{3}$ (STO) thin films are material enablers for a number of critical energy-conversion and information-storage technologies like electrochemical electrode coatings, solid oxide fuel cells and random access memories.…
Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in…
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced…
We investigate the optical conductivity of Sr$_{1-x}$Ca$_x$RuO$_3$ across the ferromagnetic to paramagnetic transition that occurs at $x=0.8$. The thin films were grown by metalorganic aerosol deposition with $0 \leq x \leq 1$ onto…
Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include…
Elastic constants and sound velocities of nm-order thin films are essential for designing acoustic filters. However, it is difficult to measure them for dielectric thin films. In this study, we use a three-layer structure where a dielectric…