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It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in…

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…

Materials Science · Physics 2009-11-13 L. Grenet , M. Jamet , P. Noé , V. Calvo , J. -M. Hartmann , L. E. Nistor , B. Rodmacq , S. Auffret , P. Warin , Y. Samson

The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative…

Materials Science · Physics 2015-11-29 E. Vitiello , M. Virgilio , A. Giorgioni , J. Frigerio , E. Gatti , S. De Cesari , E. Bonera , E. Grilli , G. Isella , F. Pezzoli

The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 H. Dery , L. Cywinski , L. J. Sham

Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 J. Fernández-Rossier , Alvaro S. Núñez , M. Abolfath , A. H. MacDonald

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…

Mesoscale and Nanoscale Physics · Physics 2016-09-02 P. V. Petrov , I. A. Kokurin , Yu. L. Ivanov , N. S. Averkiev , R. P. Campion , B. L. Gallagher , P. M. Koenraad , A. Yu. Silov

Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers.…

Materials Science · Physics 2009-11-10 R. Fiederling , P. Grabs , W. Ossau , G. Schmidt , L. W. Molenkamp

Optical orientation of carrier spins by circularly polarized light is the basis of spin physics in semiconductors. Here, we demonstrate strong optical orientation of 85\%, approaching the ultimate limit of unity, for excitons in…

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…

Other Condensed Matter · Physics 2015-06-24 Igor Zutic , Jaroslav Fabian , Steven C. Erwin

We study the relationship between the circular polarization of photoluminescence and the magnetic field-induced spin-polarization of the recombining charge carriers in bulk Si and Ge/Si quantum dots. First, we quantitatively compare…

Mesoscale and Nanoscale Physics · Physics 2014-01-14 N. Sircar , D. Bougeard

We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic…

Mesoscale and Nanoscale Physics · Physics 2017-11-21 S. J. Magorrian , V. Zólyomi , V. I. Fal'ko

Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin…

Mesoscale and Nanoscale Physics · Physics 2020-04-29 Di Fan , Rei Hobara , Ryota Akiyama , Shuji Hasegawa

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to…

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Sergio O. Valenzuela , M. Tinkham

A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in…

Other Condensed Matter · Physics 2007-05-23 R. D. R. Bhat , P. Nemec , Y. Kerachian , H. M. van Driel , J. E. Sipe , Arthur L. Smirl

Relativistic polarized electron beams can find applications in broad areas of fundamental physics. Here, we propose for the first time that electron spin polarization can be realized efficiently via collective beam-target interactions. When…

Plasma Physics · Physics 2024-08-13 Xing-Long Zhu , Min Chen , Wei-Min Wang , Zheng-Ming Sheng

Electroluminescence in organic semiconductors strongly depends on the relative population of excited singlet and triplet excitonic states resulting from recombination of injected carriers. In conventional organic light-emitting diodes…

Strongly Correlated Electrons · Physics 2007-05-23 V. Dediu , M. Murgia , F. C. Matacotta , S. Barbanera , C. Taliani

Twisted light beams, or optical vortices, have been used to drive the circular motion of microscopic particles in optical tweezers and have been shown to generate vortices in quantum gases. Recent studies have established that electric…

Quantum Physics · Physics 2021-07-20 Smail Bougouffa

Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of…

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…

Materials Science · Physics 2009-11-10 A. M. Bratkovsky , V. V. Osipov