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Angle-resolved photoemission spectroscopy (ARPES) is one of the most direct methods of studying the electronic structure of solids. By measuring the kinetic energy and angular distribution of the electrons photoemitted from a sample…
Although reliable models may predict the detection efficiency of semiconductor detectors, measurements are needed to check the parameters supplied by the manufacturers namely the thicknesses of dead layer, beryllium window and crystal…
Color filters have important applications in the area of Nano-spectroscopy and ccd imaging applications. Metallic nanostructures provide an efficient way to design and engineer ultrathin color filters. These nanostructures have capability…
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson…
An important issue for rare-event-search experiments, such as the search for dark matter or neutrinoless double beta decay, is to reduce radioactivity of the detector materials and the experimental environment. The selection of materials…
We demonstrate chip-scale flat-top filters at near-infrared wavelengths using negative index photonic crystal based Mach Zehnder interferometers. Supported by full three-dimensional numerical simulations, we experimentally demonstrate a new…
We have developed and tested several new designs of GEM detectors with micropattern electrodes manufactured by microelectronic technology. In one design, the inner layer of the detector electrode consists of thin metallic strips and the…
We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave…
A topological insulator possesses a bulk energy gap splitting the lowest empty band from the highest occupied electronic band. The electronic states at the surface (or edge in two dimensions), on the other hand, of a topological insulator…
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…
We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled…
The hyperspectral X-ray imaging has been long sought in various fields from material analysis to medical diagnosis. Here we propose a new semiconductor detector structure to realize energy-resolved imaging at potentially low cost. The…
The high Tc superconductor FeTe0.55Se0.45 has recently been shown to support a surface state with topological character. Here we use low-energy laser-based ARPES with variable light polarization, including both linear and circular…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
We derive an analytic connection between the screened self-consistent effective potential from density functional theory (DFT) and atomic effective pseudopotentials (AEPs). The motivation to derive AEPs is to address structures with…
To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…
A technique for measuring high-energy electrons using Si detectors of various thicknesses that are much smaller than the range of the examined electrons is presented. The advantages of the method are discussed on the basis of…
The low thermal conductivity of silicon nanostructures, with respect to bulk silicon, opens excellent possibilities for thermoelectric applications because it will enable the use of silicon for the high efficient direct conversion of wasted…
We report the implementation of energy dispersive X-ray spectroscopy for layered semiconductors in the form of atomically thin transition metal dichalcogenides. The technique is based on a scanning electron microscope equipped with a…
The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the…