Related papers: Electric spin and valley Hall effects
Orbital Hall effect (OHE) is the phenomenon of transverse flow of orbital moment in presence of an applied electric field. Solids with broken inversion symmetry are expected to exhibit a strong OHE due to the presence of an intrinsic…
Spin-orbit coupling is a fundamental mechanism that connects the spin of a charge carrier with its momentum. Likewise, in the optical domain, a synthetic spin-orbit coupling is accessible, for instance, by engineering optical anisotropies…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even…
Spin spirals represent a fundamental class of noncollinear yet coplanar magnetic structures that give rise to diverse emergent phenomena reflecting spin chirality. We investigate metallic systems hosting commensurate spin spirals and…
The optical spin Hall effect (OSHE) is a transport phenomenon of exciton polaritons in semiconductor microcavities, caused by the polaritonic spin-orbit interaction, that leads to the formation of spin textures. In the semiconductor cavity,…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
We develop a theory of Coulomb interaction-mediated contribution to valley Hall effect (VHE) in two-dimensional non-centrosymmetric gapped Dirac materials. We assume that the bare valley Hall current occurs in the system due to the presence…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
Recent technological advances allow fabricating ultraclean two-dimensional electronic systems where the electron mean free path due to static disorder and phonons is much larger compared to the conducting channel width. It makes possible to…
Spin Hall effect (SHE) in a 2D-Rashba system has been treated in the spin-dependent precession [J. Sinova et al., Phys. Rev. Letts. 92, 126603 (2004).] and the time-space gauge [T. Fujita et al., New J. Phys. 12, 013016 (2010).] approaches,…
Carrying information using generation and detection of the orbital current, instead of the spin current, is an emerging field of research, where the orbital Hall effect (OHE) is an important ingredient. Here, we propose a new mechanism of…
The observation of a Hall effect, a finite transverse voltage induced by a longitudinal current, usually requires the breaking of time-reversal symmetry, for example through the application of an external magnetic field or the presence of…
Comparing with the spin of electron, the electronic orbitals, which have been long ignored in non-equilibrium transport, are getting more and more attentions, due to the prediction and experimental verification of orbital Hall effect (OHE)…
We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel…
The transverse current (j_H) due to anomalous Hall effect (AHE) is usually assumed to be perpendicular to the magnetization (m) in ferromagnetic materials, which governs the experiments in spintronics. Generally, this assumption is derived…
We report on novel valley acoustoelectric effect, which can arise in a 2D material, like a transition metal dichalcogenide monolayer, residing on a piezoelectric substrate. The essence of this effect lies in the emergence of a drag electric…
We describe an intrinsic spin-Hall effect in $n$-type bulk zinc-blende semiconductors with topological origin. When electron transport is confined to a waveguide structure, and the applied electric field is such that the spins of electrons…
We study the coupled dynamics of spin and charge currents in a two-dimensional electron gas in the transport diffusive regime. For systems with inversion symmetry there are established relations between the spin Hall effect, the anomalous…
Since the first experimental observation of the phonon Hall effect (PHE) in 2005, its physical origin and theoretical explanation have been extensively investigated. While spin-orbit interactions are believed to play important roles under…