Related papers: Deterministic Detection of Single Ion Implantation
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect…
We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less…
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical…
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer…
We focus down an ion beam consisting of single 40Ca+ ions to a spot size of a few mum using an einzel-lens. Starting from a segmented linear Paul trap, we have implemented a procedure which allows us to deterministically load a…
We experimentally demonstrate a detection scheme suitable for state analysis of single optically trapped atoms in less than 1 {\mu}s with an overall detection efficiency {\eta} exceeding 98%. The method is based on hyperfine-state-selective…
We experimentally investigate a scheme for detecting single atoms magnetically trapped on an atom chip. The detector is based on the photoionization of atoms and the subsequent detection of the generated ions. We describe the…
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
Resolving the locations and discriminating the spin states of individual trapped ions with high fidelity is critical for a large class of applications in quantum computing, simulation, and sensing. We report on a method for high-fidelity…
Optical detection of single defect centers in the solid state is a key element of novel quantum technologies. This includes the generation of single photons and quantum information processing. Unfortunately the brightness of such atomic…
Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable…
We realize a single particle microscope by using deterministically extracted laser cooled $^{40}$Ca$^+$ ions from a Paul trap as probe particles for transmission imaging. We demonstrate focusing of the ions with a resolution of…
We describe a robust and reliable fluorescence detector for single atoms that is fully integrated into an atom chip. The detector allows spectrally and spatially selective detection of atoms, reaching a single atom detection efficiency of…
A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a…