Related papers: Hysteresis Measurements as a Diagnostic Tool: A Sy…
Field-effect transistors (FETs) based on 2D materials have already reached the stage of trial FAB integration. However, reliability limitations caused by various defects present a serious obstacle for their smooth way forward, especially…
Hysteresis is a general phenomenon regularly observed in measurements of various materials properties such as magnetism, elasticity, capillary pressure, adsorption, battery voltage etc. Usually, the hysteretic behaviour is an intrinsic…
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage,…
Adhesive interactions between elastic structures such as graphene sheets, carbon nanotubes, and microtubules have been shown to exhibit hysteresis due to irrecoverable energy loss associated with bond breakage, even in static…
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2…
The position of an interface (domain wall) in a medium with random pinning defects is not determined unambiguously by a current value of the driving force even in average. Based on general theory of the interface motion in a random medium…
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…
Using a blister test, we measured the work of separation between MoS$_2$ membranes from metal, semiconductor, and graphite substrates. We found a work of separation ranging from 0.11 +- 0.05 J/m^2 for chromium to 0.39 +- 0.1 J/m^2 for…
Hysteresis in organic electrochemical transistors (OECT) is a basic effect in which the measured current depends on the voltage sweep direction and velocity. This phenomenon has an important impact on different aspects of the application of…
Atomtronics is an emerging interdisciplinary field that seeks new functionality by creating devices and circuits where ultra-cold atoms, often superfluids, play a role analogous to the electrons in electronics. Hysteresis is widely used in…
Hysteresis is more than just an interesting oddity, which occurs in materials with a first-order transition. It is a real obstacle on the path from existing lab-scale prototypes of magnetic refrigerators towards commercialization of this…
Hysteresis is studied in a disordered Ising model in which diffusion of antiferromagnetic bonds is allowed in addition to spin flips. Saturation behavior changes to a figure-eight loop when diffusion is introduced. The upper and lower…
This article presents an approach for modelling hysteresis in piezoelectric materials, that leverages recent advancements in machine learning, particularly in sparse-regression techniques. While sparse regression has previously been used to…
The connection between hysteresis and thermal relaxation in magnetic materials is studied from both the experimental and the theoretical viewpoint. Hysteresis and viscosity effects are measured in Finemet-type nanocrystalline materials…
Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new…
Experimental systems with a first order phase transition will often exhibit hysteresis when out of equilibrium. If defects are present, the hysteresis loop can have different shapes: with small disorder the hysteresis loop has a macroscopic…
We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states…
We investigate the magnetic hysteresis of a superconducting microstrip resonator with a high edge barrier. We measure the magnetic hysteresis while either sweeping a magnetic field or tuning the edge barrier by high microwave current. We…
We demonstrate a modeling and computational framework that allows for rapid screening of thousands of potential network designs for particular dynamic behavior. To illustrate this capability we consider the problem of hysteresis, a…
MoS$_2$ field-effect transistors (FETs) with high-\textit{k} oxides currently lag behind silicon standards in bias and temperature stability due to ubiquitous border oxide traps that cause clockwise (CW) hysteresis in gate transfer…