Related papers: Defect-Charge-Driven 90{\deg} Switching in HfO2
Wake-up effect is still an obstacle in the commercialization of hafnia-based ferroelectric thin films. In this work, we investigate the effect of defects, controlled by ozone dosage, on the field cycling behavior of the atomic layer…
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a…
Spin-orbit coupling effects occurring in non-centrosymmetric materials are known to be responsible for non-trivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in…
Theoretical calculations, based on hybrid exchange density functional theory, are used to show that in graphene a periodic array of defects generates a ferromagnetic ground state at room temperature for unexpectedly large defect…
Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite…
Ferroelectricity in hafnia is often regarded as a breakthrough discovery in ferroelectrics, potentially able to revolutionize the whole field. Despite increasing interests, a comprehensive understanding of the many factors driving the…
Using Density Functional Theory, competition between Mott-Hubbard and intervalence charge transfer mechanism of electron localization is revealed in AgF$_2$, an important silver analogue of oxocuprates. We show that at reduced temperature…
HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has…
For the first time, we show that unipolar fatigue does occur in antiferroelectric capacitors, confirming the predictions of a previous work [Appl. Phys. Lett., 94, 072901 (2009)]. We also show that unipolar fatigue in antiferroelectrics is…
Interfaces can differ from their parent compounds in terms of charge, spin, and orbital orders and are fertile ground for emergent phenomena, strongly correlated physics, and device applications. Here, we discover that ferroelectric order…
Defect chemistry, strain, and structural, magnetic and electronic degrees of freedom constitute a rich space for the design of functional properties in transition metal oxides. Here, we show that it is possible to engineer polarity and…
General properties of the transport of charge carriers (electrons and holes) in disordered organic materials are discussed. It was demonstrated that the dominant part of the total energetic disorder in organic material is usually provided…
We have investigated the charge dynamics and the nature of many-body interactions in La- and Pr- doped CaFe2As2. From the infrared part of the optical conductivity, we discover that the scattering rate of mobile carriers above 200 K…
Superoxide-based non-aqueous metal oxygen batteries have received considerable research attention, as they exhibit high energy densities and round-trip efficiencies. The cycling performance, however, is still poor. Here we study the cycling…
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…
Nitrogen-doped carbon nanotubes can provide reactive sites on the porphyrin-like defects. It's well known that many porphyrins have transition metal atoms, and we have explored transition metal atoms bonded to those porphyrin-like defects…
Head-to-head ferroelectric domain walls are intrinsically charged, and are typically compensated by a mix of oppositely charged defects and free electrons. The free electrons form a two-dimensional electron gas (2DEG) along the domain wall.…
Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics…
Hafnium dioxide, also known as hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal operating…
Within the framework of the fermion-spin theory based on the charge-spin separation, the charge dynamics of the doped antiferromagnet on a triangular lattice is studied. The holon part is treated by using the loop expansion to the second…