Related papers: Detachment limited interlayer transport processes …
We introduce an off-lattice model with continuous particle distances and pair-potential interactions which allows for the efficient simulation of strained heteroepitaxial growth by means of kinetic Monte Carlo (KMC) simulations. We discuss…
We report on the use of time-resolved optical ellipsometry to monitor the deposition of single atomic layers with subatomic sensitivity. Ruddlesden-Popper thin films of SrO(SrTiO3)n=4 were grown by means of metalorganic aerosol deposition…
Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material…
Twin photons and triple photons generations require pump laser intensities of several hundred Mega Watts per square centimeter. Micrometer sized crystalline waveguides allow such interactions to be achieved at relatively low energies by…
Plasma detachment involves interactions of the plasma with impurities and neutral particles, leading to significant losses of plasma power, momentum, and particles. Accurate mapping of plasma emissivity in the divertor and X-point region is…
Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well-controlled interfaces. The first part of this paper presents a review of several useful…
We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical…
Computer simulations and scaling theory are used to investigate the damping of oscillations during epitaxial growth on high-symmetry surfaces. The crossover from smooth to rough growth takes place after the deposition of (D/F)^\delta…
We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates…
Epitaxial La1.85Sr0.15CuO4/La2/3Ca1/3MnO3 superlattices on (001)-oriented LaSrAlO4 substrates have been grown with pulsed laser deposition technique. Their structural, magnetic and superconducting properties have been determined with…
Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3 interfaces has been analyzed with a focus on the kinetic energy of the ablated species. LaGaO3 and LaAlO3 plasma plumes were studied by fast photography and space-resolved optical…
We present a pulsed laser deposition (PLD) system that can monitor growth by simultaneously using in situ optical spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). The RHEED precisely monitors the…
We report on the optimization process to synthesize epitaxial thin films of GdTiO3 on SrLaGaO4 substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie…
We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films…
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…
We exploit the effect of light-induced atomic desorption to produce high atomic densities ($n\gg k^3$) in a rubidium vapor cell. An intense off-resonant laser is pulsed for roughly one nanosecond on a micrometer-sized sapphire-coated cell,…
The properties of single-crystal SrTiO$_{3}$ substrates and homoepitaxial SrTiO$_{3}$ films grown by pulsed laser deposition have been compared, in order to understand the loss of interfacial conductivity when more than a critical thickness…
We have studied the growth dynamics and electronic properties of SrTiO3-d homoepitaxial films by pulsed laser deposition. We find the two dominant factors determining the growth mode are the kinetics of surface crystallization and…
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…
Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering…