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Networks of ligand-free semiconductor nanocrystals (NCs) offer a valuable combination of high carrier mobility and optoelectronic properties tunable via quantum confinement. In principle, maximizing carrier mobility entails crossing the…
Thin films of colloidal semiconductor CdSe quantum-dots (QDs) and a styrene/maleic anhydride copolymer were prepared by the Langmuir-Blodgett technique and their photoluminescence was characterized by confocal fluorescence lifetime…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive…
Understanding degradation in battery cathodes and other functional materials requires simultaneous knowledge of structural, chemical, and electronic changes in three dimensions (3D). Here, we present a simultaneous ADF-EDS-EELS tomography…
This work presents a cost-effective alternative technology for the formation of nanostructured semiconductor materials for tunable light emitting devices. CdS and ZnS semiconducting colloid nanoparticles coated with organic shell,…
Large reflection losses at interfaces in light emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the…
With the increasing energy crisis and the prevalent concept of green sustainability, quantum dot materials have become a hot spot in the academic and industrial fields of chemistry. Due to unique, tailor-made photovoltaic properties based…
We show a way to pattern the visible electroluminescence of solution-processed mesoporous ZnO layers. Our approach consists in locally changing the nanoscale morphology of the coated ZnO layers by patterning the underlying surface with thin…
Lead-free Cs$_3$Cu$_2$X$_5$ (X = Cl, Br, I) halides exhibit high photoluminescence quantum yields and excellent ambient stability, yet light-emitting devices based on these materials remain limited by poor optical outcoupling. In this work,…
The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and less cost than that of organic counterparts. Here we report an…
Positron Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) measurements reveal modifications of the electronic structure and composition at the surfaces of PbSe quantum dots (QDs), deposited as thin films, produced by…
Recent studies suggest that piezoelectric polarization can play an important role in determining the electronic and optical properties of nanoscale nitride heterostructures. Among a few models available, recent first-principles calculations…
Quantum dots (QDs) are nanoscale materials that exhibit unique electronic and optical properties due to quantum confinement effects, making them highly relevant for applications in catalysis, optoelectronics, and energy conversion. While…
The study of lead halide perovskite nanocrystal based light-emitting diodes (LEDs) has advanced significantly, with notable improvements in stability and optical properties. However, optimizing charge carrier injection and transport remains…
Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressive efficiencies of 12%, making them particularly promising for future applications. Like many other types of emerging photovoltaic devices, their environmental…
A complex InAs/CdSe/ZnSe Core/Shell1/Shell2 (CSS) structure is synthesized, where the intermediate CdSe buffer layer decreases strain between the InAs core and the ZnSe outer shell. This structure leads to significantly improved…
Quantum dots play a promising role in the development of novel optical and biosensing devices. In this study, we investigated steady-state and time-dependent luminescence properties of InGaP/ZnS core/shell colloidal quantum dots in a…
O(\alpha) QED radiative corrections to neutral current deep inelastic production of heavy quarks are calculated in the leading log approximation and compared with the corresponding corrections assuming a massless charm parton. Besides the…
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs…