Related papers: Dual-mode operation of ring-shaped spin Hall magne…
We demonstrate an ultrathin and semitransparent anisotropic and spin Hall magnetoresistance sensor based on NiFe/Pt heterostructure. The use of spin-orbit torque effective field for transverse biasing allows to reduce the total thickness of…
We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of…
Magnetoresistance (MR) sensors provide cost-effective solutions for diverse industrial and consumer applications, including emerging fields such as internet-of-things (IoT), artificial intelligence and smart living. Commercially available…
We conducted a systematic angular dependence study of nonlinear magnetoresistance in NiFe/Pt bilayers at variable temperature and field using the Wheatstone bridge method. We successfully disentangled magnon magnetoresistance from other…
We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the…
Next-generation spintronic sensors aim to overcome the limitations of traditional tunneling-magnetoresistance (TMR) devices, such as complex manufacturing, high $1/f$ noise, and significant offsets. This work presents a comprehensive…
A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74…
Planar Hall magnetoresistive sensors (PHMR) are promising candidates for various magnetic sensing applications due to their high sensitivity, low power consumption, and compatibility with integrated circuit technology. However, their…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Ferromagnetic-ferroelectric composites have attracted interests in recent years for use as magnetic field sensors. The sensing is based on magneto-electric (ME) coupling between the electric and magnetic subsystems and is mediated by…
The planar Hall sensitivity of obliquely deposited NiFe(10)/Pt(tPt) /IrMn(8)/Pt(3) (nm) trilayer structures has been investigated by introducing interfacial modification and altering sensor geometry. The peak-to-peak PHE voltage and AMR…
We demonstrate the influence of hard axis assist on an in-plane polarized nanomagnet layer to greatly enhance the sensitivity of a magnetic nano particle (MNP) based MTJ biosensor. The hard axis assist has been provided to the sensing layer…
Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from…
We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…
Planar Hall effect (PHE) magnetic sensors are attractive for various applications where the field resolution is required in the range of sub-nano Tesla or in Pico Tesla. Here we present a detailed noise study of the PHE sensors consisting…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
In this work, we develop a nanoscale magnetic field sensor based on a spin-Hall nano-oscillator (SHNO) device. We fabricate constriction-based SHNO devices using Ni$_{81}$Fe$_{19}$/Au$_{0.25}$Pt$_{0.75}$ bilayer and use them to demonstrate…