Related papers: Controlling GaN nucleation via O$_2$-plasma-perfor…
The crystallographic orientation of films grown on 2D-masked substrates is often used to infer the pathway among remote, van der Waals, and thru-hole (pinhole-seeded) epitaxy. However, attribution of a specific growth mechanism based on…
Control of nucleation sites is an important goal in materials growth: nuclei in regular arrays may show emergent photonic or electronic behavior, and once the nuclei coalesce into thin films, the nucleation density influences parameters…
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…
In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of…
We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model…
The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation…
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon…
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures…
Wrinkles in monolayer graphene (GN) affect the GN electronic and transport properties. Defined network of wrinkles can be reached by placing the GN on the substrate decorated with the nanoparticles (NPs). In order to explain mechanism…
In crystal growth, surfactants are additive molecules used in dilute amount or as dense, permeable layers to control surface morphologies. Here, we investigate the properties of a strikingly different surfactant: a two-dimensional and…
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of…
An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear…
The catalyst-free synthesis of graphene on dielectrics prevents the damage induced by the transfer process. Although challenging, to master this synthesis would boost the integration of graphene on consumer electronics since defects hinder…
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical…
Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction…
In ferromagnetic multilayers, a single laser pulse with a fluence above an optical nucleation threshold can create magnetic skyrmions, which are randomly distributed over the area of the laser spot. However, in order to study the dynamics…
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is…
We propose a 2D graphene structure containing atomic ensemble as a platform for implementing nanoscale enhanced coherent interactions of plasmonic fields with resonant atomic systems. We determine the graphene surface plasmon modes, and the…
Controlled wrinkling of single-layer graphene (1-LG) at nanometer scale was achieved by introducing monodisperse nanoparticles (NPs), with size comparable to the strain coherence length, underneath the 1-LG. Typical fingerprint of the…
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally…