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The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in…

Materials Science · Physics 2012-01-31 Maxim Y. Gureev , Pavel Mokry , Alexander K. Tagantsev , Nava Setter

We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and…

Materials Science · Physics 2009-11-13 J. Y. Jo , H. S. Han , J. -G. Yoon , T. K. Song , S. -H. Kim , T. W. Noh

Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…

Materials Science · Physics 2024-10-29 Elzbieta Gradauskaite , Chia-Jung Yang , Shovon Pal , Manfred Fiebig , Morgan Trassin

Bilayers of two-dimensional van der Waals materials that lack an inversion centre can show a novel form of ferroelectricity, where certain stacking arrangements of the two layers lead to an interlayer polarization. Under an external…

Superconductivity · Physics 2024-06-27 Gaurav Chaudhary , Ivar Martin

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…

Materials Science · Physics 2017-12-06 Ye Cao , Anna Morozovska , Sergei V. Kalinin

A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…

Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…

Materials Science · Physics 2026-01-15 Claire Griesbach , Tizian Scharsach , Morgan Trassin , Dennis M. Kochmann

Ferroelectric domain walls are planes within an insulating material that can accumulate and conduct charge carriers, hence the interaction of the domain walls with the charge carriers can be important for photovoltaic and other electronic…

Materials Science · Physics 2022-07-25 Sabine Körbel , Jirka Hlinka , Stefano Sanvito

Electric control of magnetism at room temperature is crucial for developing next-generation, low-power spintronic devices. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the…

Materials Science · Physics 2026-04-15 Quanchao Du , Jinlian Lu , Xueqing Wan , Zhenlong Zhang , Zhijun Jiang

Ferroelectricity, a hallmark of spontaneous inversion-symmetry breaking, has been a central concept in condensed matter physics and functional materials research, yet recent discoveries are revealing that switchable polarization can emerge…

Materials Science · Physics 2026-05-11 Yudi Yang , Changming Ke , Shi Liu

The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility.…

Materials Science · Physics 2024-10-25 Drew Behrendt , Atanu Samanta , Andrew M. Rappe

We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Gen Tatara

The recently discovered ferroelectricity of van der Waals bilayers offers an unconventional route to improve the performance of devices. Key parameters such as switching field and speed depend on the static and dynamic properties of domain…

Materials Science · Physics 2023-01-02 Ri He , Bingwen Zhang , Hua Wang , Lei Li , Tang Ping , Gerrit Bauer , Zhicheng Zhong

Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…

Artificially induced asymmetric tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a…

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

Materials Science · Physics 2020-11-17 Vincent Garcia

A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…

Macroscopic descriptions of ferroelectrics have an obvious appeal in terms of efficiency and physical intuition. Their predictive power, however, has often been thwarted by the lack of a systematicp rocedure to extract the relevant…

Materials Science · Physics 2022-06-07 Oswaldo Diéguez , Massimiliano Stengel

The discovery of two-dimensional (2D) ferroelectrics with switchable out-of-plane polarization such as monolayer $\alpha$-In$_2$Se$_3$ offers a new avenue for ultrathin high-density ferroelectric-based nanoelectronics such as ferroelectric…

Materials Science · Physics 2021-12-01 Jing Wu , Liyi Bai , Jiawei Huang , Liyang Ma , Jian Liu , Shi Liu

Simultaneous imaging of the piezoresponse phase, amplitude and bare surface topography of displacive ferroelectric thin films by scanning probe microscopy directly shows the nature of domain wall pinning and its relation to morphological…

Mesoscale and Nanoscale Physics · Physics 2010-01-05 S. Bhattacharya , M. J. Higgins
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