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Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary and relatively abundant intrinsic defect, no optical signal…
Quantum technology is poised to enable a step change in human capability for computing, communications and sensing. Photons are indispensable as carriers of quantum information - they travel at the fastest possible speed and readily…
Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter…
Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform…
In this literature review we investigate the permittivity, density-of-state mass, band gap, impact ionization, charge carrier recombination, incomplete ionization and mobility in 4H silicon carbide. We provide a comprehensive overview over…
Integrated photonics offers great potential for quantum communication devices in terms of complexity, robustness and scalability. Silicon photonics in particular is a leading platform for quantum photonic technologies, with further benefits…
We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which…
Solid-state point defects are attracting increasing attention in the field of quantum information science, because their localized states can act as a spin-photon interface in devices that store and transfer quantum information, which have…
Imaging individual conformational instances of generic, inhomogeneous, transient or intrinsically disordered protein systems at the single molecule level in situ is one of the notable challenges in structural biology. Present techniques…
Realizing multiply resonant photonic crystal cavities with large free spectral range is key to achieve integrated devices with highly efficient nonlinear response, such as frequency conversion, four-wave mixing, and parametric oscillation.…
Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a…
The applications of nanomechanical resonators range from biomolecule mass sensing to hybrid quantum interfaces. Their performance is often limited by internal material damping, which can be greatly reduced by using crystalline materials.…
Monolithic integration of solid-state color centers with photonic elements of the same material is a promising approach to overcome the constraints of fabrication complexity and coupling losses in traditional hybrid integration approaches.…
Silicon photonic integrated circuits offer significant improvements in processing bandwidth, power efficiency, and low latency, addressing the needs of future microwave communication systems. Several successful applications have been…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to…
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ…
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate…
Silicon vacancies ($V_\mathrm{Si}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor platforms. However, conventional CMOS-compatible processing…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…