Related papers: Reinforcement-Learning-Designed Field-Free Sub-Nan…
Exploiting current-induced spin-orbit torques (SOTs) to manipulate the magnetic state of dipolar-coupled nanomagnet systems with in-plane magnetic anisotropy, such as artificial spin ices, provides a route to local,…
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane…
We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…
We present results of micromagnetic simulations of thin ferromagnetic rings undergoing magnetization reversal. This geometry is one of few examples in micromagnetics in which the transition states have been found analytically in a 1D model.…
We report the experimental observation of spin-orbit torque induced switching of perpendicularly magnetized Pt/Co elements in a time resolved stroboscopic experiment based on high resolution Kerr microscopy. Magnetization dynamics is…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
We address the problem of automatic synchronisation of the spintronic oscillator (STO) by means of reinforcement learning (RL). A numerical solution of the macrospin Landau-Lifschitz-Gilbert-Slonczewski equation is used to simulate the STO…
The Landau-Lifshitz-Gilbert (LLG) equation, used to model magneto-dynamics in ferromagnets, tacitly assumes that the angular momentum associated with spin precession can relax instantaneously when the real or effective magnetic field…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…
Researchers have recently identified a novel class of magnetism, termed "altermagnetism", which exhibits characteristics of both ferromagnetism and antiferromagnetism. Here, we report a groundbreaking discovery of efficient field-free…
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d…
Sampling-based trajectory planners are widely used for agile autonomous driving due to their ability to generate fast, smooth, and kinodynamically feasible trajectories. However, their behavior is often governed by a cost function with…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
The parametric torque presents a promising recording mechanism for MRAM, complementing Spin Transfer Torque and Spin Orbit Torque, enabling magnetization reversal in a nanomagnet using a DC electrical current. Its resonance nature allows…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
We consider the general Landau-Lifshitz-Gilbert (LLG) dynamical theory underlying the magnetization switching rates of a thin film uniaxial magnet subject to spin-torque effects and thermal fluctuations (thermal noise). After discussing the…