Related papers: Antiferron Modes in Ferroelectric Materials
We consider an altermagnet subject to the electron attractive potential mediated by the dispersive phonons. While altermagnetism suppresses superconductivity, scattering of electrons on the Fermi surface by thermal phonons suppresses…
The contribution of the polarization associated with the noncollinear parts of spins in the dielectric permeability tensor of multiferroic materials is considered. As the equilibrium state, we consider the systems of parallel spins, so we…
Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered…
By performing accurate ab-initio density functional theory calculations, we study the role of $4f$ electrons in stabilizing the magnetic-field-induced ferroelectric state of DyFeO$_{3}$. We confirm that the ferroelectric polarization is…
Multiferroics offer exciting opportunities for electric-field control of magnetism. Unfortunately, single-phase multiferroics suitable for such applications at room temperature has not been discovered. Here, we propose the concept of a new…
In this paper, we re-explore a simple textbook Landau model describing improper ferroelectricity and show that in the limit where both proper and improper instabilities exist and compete, improper ferroelectrics can display switching…
Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by…
In the first part of this work we calculate the high frequency magnetoelectric susceptibility of a simultaneously ferroelectric and canted antiferromagnetic (also know as weak ferromagnetic) thin film with magnetostrictive magnetoelectric…
We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the…
The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons…
Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science[1-9]. However, the coexistence of magnetism and conventional ferroelectricity is physically…
We investigate numerically the homogenized permittivities of composites made of low index dielectric inclusions in a ferroelectric matrix under a static electric field. A refined model is used to take into account the coupling between the…
Polarons can naturally form in materials from the interaction of extra charge carriers with the atomic lattice. Ubiquitous, they are central to various topics and phenomena such as high-T$_c$ superconductivity, electrochromism,…
Lead zirconate (PbZrO$_3$) is considered the prototypical antiferroelectric material with an antipolar ground state. Yet, several experimental and theoretical works hint at a partially polar behaviour in this compound, indicating that the…
Within Landau theory, magnetism and polarity are homotopic, displaying a one-to-one correspondence between most physical characteristics. However, despite widely reported noncollinear magnetism, spontaneous noncollinear electric dipole…
Polarization switching mechanisms in ferroelectric materials are fundamentally linked to local domain structure and presence of the structural defects, which both can act as nucleation and pinning centers and create local electrostatic and…
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown…
In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a non-ferroelectric polar material becomes a ferroelectric by interfacing with a thin ferroelectric layer. Strongly polar…