Related papers: Quantum Hall Resistance and Quantum Hall Plateaus …
We study how the stability of the fractional quantum Hall effect (FQHE) is influenced by the geometry of band structure in lattice Chern insulators. We consider the Hofstadter model, which converges to continuum Landau levels in the limit…
A two-dimensional lattice model for non-interacting fermions in a magnetic field with half a flux quantum per plaquette and $N$ levels per site is considered. This is a model which exhibits the Integer Quantum Hall Effect (IQHE) in the…
We numerically compute the guiding center static structure factor $\bar S(\bf k)$ of various fractional quantum Hall (FQH) states to $\mathcal{O}\left((k\ell)^6\right)$ where $k$ is the wavenumber and $\ell$ is the magnetic length.…
The quantum valley Hall effect (QVHE) has been observed in a variety of experimental setups, both quantum and classical. While extremely promising for applications, one should be reminded that QVHE is not an exact topological phenomenon and…
We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor \nu approaches an integer i,…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
The fractional quantum Hall effect (FQHE) in the second orbital Landau level at filling factor 5/2 remains enigmatic and motivates our work. We consider the effect of the quasi-2D nature of the experimental FQH system on a number of FQH…
The resistivity minima of the quantum Hall effect arise due to the localization of the electron states at the Fermi energy, when it is positioned between adjacent Landau levels. In this paper we calculate the localization length $\xi$ of…
The quantum anomalous Hall (QAH) effect, a condensed matter analog of the parity anomaly, is characterized by a quantized Hall conductivity in the absence of an external magnetic field. However, it has been recently shown that, even in the…
We have observed quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy.…
We predict a new class of quantum Hall phenomena in completely neutral systems, demonstrating that the interplay between radial electric fields and dipole moments induces exact $e^2/h$ quantization without the need for Landau levels or…
We use the dynamical structure factors of the quantum Hall states at $\nu=1/3$ and $\nu=1/2$ in the lowest Landau level to study their excitation spectrum. Using the density matrix renormalization group in combination with the…
The recent Quantum Hall experiments in graphene have confirmed the theoretically well-understood picture of the quantum Hall (QH) conductance in fermion systems with continuum Dirac spectrum. In this paper we take into account the lattice,…
A breakdown of integer quantum Hall effect (IQHE) at strong disorder is studied numerically in a lattice model. We find a generic sequence by which the integer quantum Hall plateaus disappear: higher IQHE plateaus always vanish earlier than…
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant…
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…
We investigate, using finite size numerical calculations, the spin-polarized fractional quantum Hall effect (FQHE) in the first excited Landau level (LL). We find evidence for the existence of an incompressible state at $\nu = \frac{7}{3} =…
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau…
The integer quantum Hall effect is analysed using a transport mechanism with a semi-classic wave packages of electrons in this paper. A strong magnetic field perpendicular to a slab separates the electron current into two branches with…
We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with…