Related papers: Hybrid metal-semiconductor quantum dots in InAs as…
Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to…
Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional…
We model a quantum dot-array (with one electron per dot) comprising of two (or more than two) coupled dots by an extended Hubbard Hamiltonian to investigate the role played by the inter-dot tunneling amplitude td, together with intra-dot…
Hybrid superconductor-semiconductor devices are currently one of the most promising platforms for realizing Majorana zero modes. Their topological properties are controlled by the band alignment of the two materials, as well as the…
Modular architectures are a promising route toward scalable superconducting quantum processors, but finite fabrication yield and the lack of high quality temporary interconnects impose fundamental limitations on system size. Here, we…
The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of…
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…
Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical…
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy,…
We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…
Quantum dot arrays possess ground states governed by Coulomb energies, utilized prominently by singly occupied quantum dots, each implementing a spin qubit. For such quantum processors, the controlled transitions between ground states are…
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…
Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically defined quantum dots provide a promising platform but are not…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
In recent years, there has been a significant progress in the development of digital quantum processors. The state-of-the-art quantum devices are imperfect, and fully-algorithmic fault-tolerant quantum computing is a matter of future. Until…
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…
We review the theoretical aspects of pseudospin quantum computation using vertically coupled quantum dots in the quantum Hall regime. We discuss the robustness and addressability of these collective, charge-based qubits. The low energy…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly…
We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution…