Related papers: Focused Ion Beam patterning of MnSb(1-101) based s…
The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are investigated to explore the sensitivity of the magnetic states to temperature, magnetic field, and sample history. The data reveal a moderate anisotropy in the…
Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of…
The quantum anomalous Hall effect has been observed in several magnetically doped topological insulators, where its robustness and macroscopic magnetization properties have been taken to suggest the presence of long-range ferromagnetic…
Employment of the non-trivial proximity effect in Superconductor/Ferromagnet (S/F) heterostructures for creation of novel superconducting devices requires an accurate control of magnetic states in complex thin-film multilayers composing…
The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus…
We investigate the effect of focused-ion-beam (FIB) irradiation on spin waves with sub-micron wavelengths in Yttrium-Iron-Garnet (YIG) films. Time-resolved scanning transmission X-ray (TR-STXM) microscopy was used to image the spin waves in…
We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase…
In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect…
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…
We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR…
Single crystals of LaNiSb$_3$ were grown using the Sn flux method. Structural characterization confirms that LaNiSb$_3$ crystallizes in the orthorhombic $Pbcm$ space group with lattice parameters $a = 13.0970(2)\,\mathrm{\AA}$, $b =…
The interplay between vortex guiding and the Hall effect in superconducting Nb films with periodically arranged nanogrooves is studied via four-probe measurements in standard and Hall configurations and accompanying theoretical modeling.…
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices…
Magnetic anisotropy in an antiferromagnet (AFM) with inversion symmetry breaking (ISB) is investigated. The magnetic anisotropy energy (MAE) resulting from the Rashba spin-orbit and s-d type exchange interactions is determined for two…
Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher…
The proposals for realizing exotic particles through coupling of quantum Hall effect to superconductivity involve spatially non-uniform magnetic fields. As a step toward that goal, we study, both theoretically and experimentally, a system…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
The L1_2-phase non-collinear antiferromagnet (AFM) Mn_3Ir has emerged as a pioneering platform for realizing the zero-field anomalous Hall effect (AHE), thereby catalyzing rapid advances in antiferromagnetic spintronics. Despite its…
Despite the blooming interest, the transition-metal rare-earth ferrimagnets have not been comprehensively understood in terms of their coercivity and transport properties. Here, we report a systematic study of the magnetic and transport…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…