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Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction.…

Materials Science · Physics 2009-11-10 R. J. Elliott , E. M. Epshtein , Yu. V. Gulyaev , P. E. Zilberman

In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…

Spin-orbit torque in heavy metal/ferromagnet heterostructures with broken spatial inversion symmetry provides an efficient mechanism for manipulating magnetization using a charge current. Here, we report the presence of a spin torque in a…

Mesoscale and Nanoscale Physics · Physics 2019-05-29 Ziyan Luo , Qi Zhang , Yanjun Xu , Yumeng Yang , Xinhai Zhang , Yihong Wu

A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space,…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 J. -E. Wegrowe , S. M. Santos , M. -C. Ciornei , H. -J. Drouhin , J. M. Rubí

Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…

Materials Science · Physics 2010-11-22 Yu. V. Gulyaev , P. E. Zilberman , E. M. Epshtein

We propose a theoretical model of magnetization switching in a ferromagnetic multilayer by both electric current and microwaves. The electric current gives a spin transfer torque on the magnetization, while the microwaves induce a…

Mesoscale and Nanoscale Physics · Physics 2016-01-22 Tomohiro Taniguchi , Daisuke Saida , Yoshinobu Nakatani , Hitoshi Kubota

We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Materials Science · Physics 2015-03-13 M. Carpentieri , R. Tomasello , M. Ricci , P. Burrascano , G. Finocchio

Using thin film pillars ~100 nm in diameter, containing two ferromagnetic Co layers of different thicknesses separated by a paramagnetic Cu spacer, we examine effects of torques due to spin-polarized currents flowing perpendicular to the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 J. A. Katine , F. J. Albert , R. A. Buhrman , E. B. Myers , D. C. Ralph

Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…

Materials Science · Physics 2016-11-30 X. Zhang , C. H. Wan , Z. H. Yuan , Q. T. Zhang , H. Wu , L. Huang , W. J. Kong , C. Fang , U. Khan , X. F. Han

Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and…

Materials Science · Physics 2009-11-07 K. Xia , P. J. Kelly , G. E. W. Bauer , A. Brataas , I. Turek

We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…

Materials Science · Physics 2009-11-13 Hong-Xiang Wei , Jiexuan He , Zhen-Chao Wen , Xiu-Feng Han , Wen-Shan Zhan , Shufeng Zhang

Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…

Mesoscale and Nanoscale Physics · Physics 2021-04-14 Jamileh Beik Mohammadi , Andrew D. Kent

The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…

Mesoscale and Nanoscale Physics · Physics 2018-08-22 Rajagopalan Ramaswamy , Jong Min Lee , Kaiming Cai , Hyunsoo Yang

We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a…

Materials Science · Physics 2012-08-16 Soo-Man Seo , Kyung-Jin Lee

We study theoretically the detection and possible utilization of electric current-induced mechanical torques in ferromagnetic-normal metal heterostructures that are generated by spin-flip scattering or the absorption of transverse spin…

Mesoscale and Nanoscale Physics · Physics 2010-01-01 Alexey A. Kovalev , Gerrit E. W. Bauer , Arne Brataas

Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…

In ferromagnets, charge currents can excite magnons via the spin-orbit coupling. We develop a novel and general scattering theory of charge current induced macrospin magnetization torques in normal metal$|$ferromagnet$|$normal metal layers.…

Mesoscale and Nanoscale Physics · Physics 2010-06-10 Kjetil M. D. Hals , Arne Brataas , Yaroslav Tserkovnyak

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…

A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…

Materials Science · Physics 2007-05-23 Z. F. Lin , S. T. Chui , L. B. Hu