Related papers: PRACtical: Subarray-Level Counter Update and Bank-…

This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…

High access frequency of certain rows in the DRAM may cause data loss in cells of physically adjacent rows due to crosstalk. The malicious exploit of this crosstalk by repeatedly accessing a row to induce this effect is known as row…

DRAM is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent data loss. Refresh operations degrade system performance by interfering with memory accesses. As DRAM chip density increases with…

Since its public introduction in the mid-2010s, the Row Hammer (RH) phenomenon has drawn significant attention from the research community due to its security implications. Although many RH-protection schemes have been proposed by processor…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

This paper investigates secure low-cost in-DRAM trackers for mitigating Rowhammer (RH). In-DRAM solutions have the advantage that they can solve the RH problem within the DRAM chip, without relying on other parts of the system. However,…

The Rowhammer vulnerability continues to get worse, with the Rowhammer Threshold (TRH) reducing from 139K activations to 4.8K activations over the last decade. Typical Rowhammer mitigations rely on tracking aggressor rows. The number of…

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests…

Rowhammer is a critical vulnerability in dynamic random access memory (DRAM) that continues to pose a significant threat to various systems. However, we find that conventional load-based attacks are becoming highly ineffective on the most…

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

Modern multicore system-on-chips (SoCs) share off-chip DRAM across cores, where bank-level interference can significantly degrade performance and threaten real-time guarantees. While prior work has focused on per-core bandwidth regulation,…

Rowhammer is a serious security problem of contemporary dynamic random-access memory (DRAM) where reads or writes of bits can flip other bits. DRAM manufacturers add mitigations, but don't disclose details, making it difficult for customers…

This article summarizes the idea of "refresh-access parallelism," which was published in HPCA 2014, and examines the work's significance and future potential. The overarching objective of our HPCA 2014 paper is to reduce the significant…

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attackers leverage RowHammer bitflips in real systems to take over…

DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be…

This paper summarizes the idea of Subarray-Level Parallelism (SALP) in DRAM, which was published in ISCA 2012, and examines the work's significance and future potential. Modern DRAMs have multiple banks to serve multiple memory requests in…

Modern systems mitigate Rowhammer using victim refresh, which refreshes the two neighbours of an aggressor row when it encounters a specified number of activations. Unfortunately, complex attack patterns like Half-Double break…

DRAM is the primary technology used for main memory in modern systems. Unfortunately, as DRAM scales down to smaller technology nodes, it faces key challenges in both data integrity and latency, which strongly affect overall system…