Related papers: Autferroicity: concept, candidates, and applicatio…
Within the broad class of multiferroics (compounds showing a coexistence of magnetism and ferroelectricity), we focus on the subclass of "improper electronic ferroelectrics", i.e. correlated materials where electronic degrees of freedom…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
From the physical point of view multiferroics present an extremely interesting class of systems and problems. These are essentially of two kinds. One is what are the microscopic conditions, and sometimes constrains, which determine the…
First-principles calculations are presented for the layered perovskite Ca$_3$Mn$_2$O$_7$. The results reveal a rich set of coupled structural, magnetic and polar domains in which oxygen octahedron rotations induce ferroelectricity,…
An atomistic approach is used to investigate finite-temperature properties of ferroelectric nanodots that are embedded in a polarizable medium. Different phases are predicted, depending on the ferroelectric strengths of the material…
We present key issues of related phenomenons of the Ferroelectricity and the Charge Disproportionation in organic metals. In (TMTTF_2X the dielectric susceptibility demonstrates clear cases of the ferroelectric and anti-ferroelectric phase…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and…
We combine two aspects of magnetic frustration, multiferroicity and emergent quasi-particles in spin liquids, by studying magneto-electric monopoles. Spin ice offers to couple these emergent topological defects to external fields, and to…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
It was recently observed that materials showing most striking multiferroic phenomena are frustrated spin-density-wave magnets. We present a simple phenomenological theory, which describes the orientation of the induced electric polarization…
The dielectric properties of the prototypical frustrated ferromagnetic spin-chain compound PbCuSO$_4$(OH)$_2$ known as linarite, are studied across its strongly anisotropic magnetic phase diagram in single crystal samples. The ferroelectric…
Recent developments have introduced a groundbreaking form of collinear magnetism known as "altermagnetism". This emerging magnetic phase is characterized by robust time-reversal symmetry breaking, antiparallel magnetic order, and…
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in…
We report a comprehensive study of single crystals of the noncentrosymmetric rare-earth compound EuPtSi$_{3}$ grown by the optical floating-zone technique. Measurements of the magnetization, ac susceptibility, and specific heat consistently…
Based on a hybrid interlayer coupling mechanism, we study the coexistence of superconductivity (SC) and antiferromagnetism (AFM) in trilayer cuprates. By introducing an interlayer magnetic scattering term, we solve the multilayer $t{-}J$…
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control…
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…
By performing accurate ab-initio density functional theory calculations, we study the role of $4f$ electrons in stabilizing the magnetic-field-induced ferroelectric state of DyFeO$_{3}$. We confirm that the ferroelectric polarization is…
Multiferroics, combining ferroelectric and magnetic orders, enable magnetoelectric (ME) coupling for advanced applications. This mini review explores single-phase and composite multiferroics, examining phenomenological, microscopic,…