Related papers: Mapping diverse hysteresis dynamics in scaled MoS$…
Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…
Rolling bearings are critical components in rotating machinery, and their faults can cause severe damage. Early detection of abnormalities is crucial to prevent catastrophic accidents. Traditional and intelligent methods have been used to…
Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new…
Trapped matter-wave interferometers (TMIs) present a platform for precision sensing within a compact apparatus, extending coherence time by repeated traversal of a confining potential. However, imperfections in this potential can introduce…
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…
Twisted bilayers of transition metal dichalcogenides (TMDC) form moir\'e superlattices resulting in moir\'e minibands in momentum space and hosting localized excitons in real space. While moir\'e superlattices provide access to Mott-Hubbard…
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…
Two-level system (TLS) defects in dielectrics cause decoherence in superconducting circuits, yet their origin, frequency distribution, and dipole moments remain poorly understood. Current probes, primarily based on qubits or resonators,…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
Recently, 2D JTMDs with asymmetric electronic structures are inviting an intense research interest in modern science and technology. Using the first principles-based periodic hybrid dispersion-corrected Density Functional Theory (DFT-D)…
Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
A micro-expression is a spontaneous unconscious facial muscle movement that can reveal the true emotions people attempt to hide. Although manual methods have made good progress and deep learning is gaining prominence. Due to the short…
Accurate modeling of magnetic hysteresis is essential for high-fidelity power electronics device simulations. The transient hysteresis phenomena such as the ringing effect and the minor loops are the bottleneck for the accurate hysteresis…
The intelligent fault diagnosis of rotating mechanical equipment usually requires a large amount of labeled sample data. However, in practical industrial applications, acquiring enough data is both challenging and expensive in terms of time…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
The coexistence of semiconducting (2H) and metallic (1T) phases of MoS$_{2}$ monolayers have further pushed their strong potential for applications in the next generation of electronic devices based on the two-dimensional lateral…
In this work, we unveil the effect of RS, induced by a current-voltage hysteresis cycles across CVD-grown monolayer MoS2 based gated RRAM, on its transistors electrical and reliability characteristics. A unique gate voltage dependence on…