Related papers: Hidden fully-compensated ferrimagnetism
We consider a superconducting altermagnet heterostructure and demonstrate that the interplay between altermagnetism and a selective filter of transverse momentum channels enables perfect nonreciprocal spin-polarized currents. We demonstrate…
Half-metallic ferromagnets show 100% spin-polarization at the Fermi level and are ideal candidates for spintronic applications. Despite the extensive research in the field, very few materials have been discovered so far. Here we present…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unprecedented opportunites for information encoding and processing in novel energy-efficient devices. By coupling valley and…
We consider theoretically the possibility of coexisting ferroelectric and metallic altermagnetic order, which has recently been predicted in insulating and semiconducting systems via ab initio calculations. Solving self-consistently a…
Generating and characterizing uniform and staggered spin polarization in antiferromagnets is one of the key challenges for antiferromagnetic spintronic technology. Here, we perform perturbative theory, group-theoretical symmetry analysis,…
Exploring hidden effects that have been overlooked given the nominal global crystal symmetry but are indeed visible in solid-state materials has been a fascinating subject of research recently. Here, we introduce a novel hidden Zeeman-type…
The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and…
Altermagnetism is introduced as a category of magnetic states with vanishing net magnetic moment, and consists of collinear alternating (i.e., antiferromagnetic-like) spins and alternating variations of local structures around spins in such…
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…
Net-zero-magnetization magnets have garnered intensive research attention due to their ultradense and ultrafast potential. In terms of the symmetric classification of connecting magnetic atoms with opposite spin polarization, the…
Altermagnetism is a new magnetic phase with k-dependent spin polarization and may exist in an insulating state with a high N\'eel temperature. This provides a new opportunity to obtain both spin and electric polarization in one material.…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
Multiferroics exhibit significant potential for low-power spintronic devices due to magnetoelectric coupling. Here, we discuss an emerging class of altermagnetic multiferroics, a system demonstrating distinct advantages including zero net…
Half-metallicity (full spin polarization of the Fermi surface) usually occurs in strongly correlated electron systems. We demonstrate that doping a spin-density wave insulator in the weak-coupling regime may also stabilize half-metallic…
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontaneous polarization and magnetization hinders the efficient…
We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized…
Altermagnets exhibit nonrelativistic spin splitting due to the breaking of time-reversal symmetry and have been garnering significant attention as promising materials for spintronic applications. In contrast, conventional antiferromagnets…
Spin-split antiferromagnets have significance for antiferromagnetic (AFM) spintronics due to their momentum dependent spin polarization which can be exploited for the control and detection of the AFM order parameter. Here, we explore the…