Related papers: Bulk spin-orbit torque-driven spin Hall nano-oscil…
Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially…
Constriction-based spin Hall nano-oscillators (SHNOs) show great promise for application as highly tunable microwave sources with straightforward scalability toward large coupled networks. However, details of the magnetization dynamics…
We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the…
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current.…
Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…
The development of advanced spintronics devices hinges on the efficient generation and utilization of pure spin current. In materials with large spin-orbit coupling, the spin Hall effect may convert charge current to pure spin current and a…
Materials with significant spin-orbit coupling enable efficient spin-to-charge interconversion, which can be utilized in novel spin electronic devices. A number of elements, mainly heavy-metals (HM) have been identified to produce a sizable…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Spin Hall nano-oscillators (SHNOs) utilize pure spin currents to drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to each other they can interact and…
We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…
Designing materials with enhanced spin charge conversion, i.e., with high spin Hall conductivity (SHC) and low longitudinal electric conductivity (hence large spin Hall angle (SHA)), is a challenging task, especially in the presence of a…
We report measurements of the spin torque efficiencies in perpendicularly-magnetized Pt/Co bilayers where the Pt resistivity $\rho_{Pt}$ is strongly dependent on thickness $t_{Pt}$ . The damping-like spin Hall torque efficiency per unit…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like…
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…
We measured the spin rectify effect and the inverse spin Hall effect in Nb-doped SrTiO$_3$ by injecting the spins from ferromagnetic thin films to SrTiO$_3$ using spin pumping. It was shown that the spin injection is increased when the…
We report the development of the [Pt0.75Ti0.25/Co-Ni multilayer/Ta]n superlattice with strong spin-orbit torque, large perpendicular magnetic anisotropy, and low switching current density. We demonstrate that the efficiency of the…